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PDF H9012 Data sheet ( Hoja de datos )
| Número de pieza | H9012 | |
| Descripción | PNP Silicon Transistor | |
| Fabricantes | Shantou Huashan | |
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H9012
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………-40V
VCEO——Collector-Emitter Voltage……………………………-20V
1―Emitter，E
2―Base，B
3―Collector，C
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-500mA
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
DataSheeMt4iUn .comTyp
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
78
40
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
-600
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
-40
-20
-5
Max Unit
-100 nA
-100 nA
246
-600
-1.2
-730
mV
V
mV
V
V
V
Test Conditions
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VCB=-25V, IE=0
VEB=-3V, IC=0
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA，IC=0
█ hFE Classification
E
78—112
F
96—135
G
112—166
H
144—202
I
176—246
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