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OR2C06A Schematic ( PDF Datasheet ) - Lattice

Teilenummer OR2C06A
Beschreibung Field-Programmable Gate Ayyays
Hersteller Lattice
Logo Lattice Logo 




Gesamt 30 Seiten
OR2C06A Datasheet, Funktion
Data Sheet
January 2002
ORCA® Series 2
Field-Programmable Gate Arrays
Features
High-performance, cost-effective, low-power
0.35 µm CMOS technology (OR2CxxA), 0.3 µm CMOS
technology (OR2TxxA), and 0.25 µm CMOS technology
(OR2TxxB), (four-input look-up table (LUT) delay less
than 1.0 ns with -8 speed grade)
High density (up to 43,200 usable, logic-only gates; or
99,400 gates including RAM)
Up to 480 user I/Os (OR2TxxA and OR2TxxB I/Os are
5 V tolerant to allow interconnection to both 3.3 V and
5 V devices, selectable on a per-pin basis)
Four 16-bit look-up tables and four latches/ip-ops per
PFU, nibble-oriented for implementing 4-, 8-, 16-, and/or
32-bit (or wider) bus structures
Eight 3-state buffers per PFU for on-chip bus structures
Fast, on-chip user SRAM has features to simplify RAM
design and increase RAM speed:
— Asynchronous single port: 64 bits/PFU
— Synchronous single port: 64 bits/PFU
— Synchronous dual port: 32 bits/PFU
Improved ability to combine PFUs to create larger RAM
structures using write-port enable and 3-state buffers
Fast, dense multipliers can be created with the multiplier
mode (4 x 1 multiplier/PFU):
— 8 x 8 multiplier requires only 16 PFUs
— 30% increase in speed
Flip-op/latch options to allow programmable priority of
synchronous set/reset vs. clock enable
Enhanced cascadable nibble-wide data path
capabilities for adders, subtractors, counters, multipliers,
and comparators including internal fast-carry operation
Innovative, abundant, and hierarchical nibble-
oriented routing resources that allow automatic use of
internal gates for all device densities without sacricing
performance
Upward bit stream compatible with the ORCA ATT2Cxx/
ATT2Txx series of devices
Pinout-compatible with new ORCA Series 3 FPGAs
TTL or CMOS input levels programmable per pin for the
OR2CxxA (5 V) devices
Individually programmable drive capability:
12 mA sink/6 mA source or 6 mA sink/3 mA source
Built-in boundary scan (IEEE*1149.1 JTAG) and
3-state all I/O pins, (TS_ALL) testability functions
Multiple conguration options, including simple, low pin-
count serial ROMs, and peripheral or JTAG modes for in-
system programming (ISP)
Full PCI bus compliance for all devices
Supported by industry-standard CAE tools for design
entry, synthesis, and simulation with ORCA Foundry
Development System support (for back-end implementa-
tion)
New, added features (OR2TxxB) have:
— More I/O per package than the OR2TxxA family
— No dedicated 5 V supply (VDD5)
— Faster conguration speed (40 MHz)
— Pin selectable I/O clamping diodes provide 5V or 3.3V
PCI compliance and 5V tolerance
— Full PCI bus compliance in both 5V and 3.3V PCI sys-
tems
* IEEE is a registered trademark of The Institute of Electrical and
Electronics Engineers, Inc.
Table 1. ORCA Series 2 FPGAs
Device
OR2C04A/OR2T04A
OR2C06A/OR2T06A
OR2C08A/OR2T08A
OR2C10A/OR2T10A
OR2C12A/OR2T12A
OR2C15A/OR2T15A/OR2T15B
OR2C26A/OR2T26A
OR2C40A/OR2T40A/OR2T40B
Usable
Gates*
4,800—11,000
6,900—15,900
9,400—21,600
12,300—28,300
15,600—35,800
19,200—44,200
27,600—63,600
43,200—99,400
# LUTs Registers
400
576
784
1024
1296
1600
2304
3600
400
576
724
1024
1296
1600
2304
3600
Max User
RAM Bits
6,400
9,216
12,544
16,384
20,736
25,600
36,864
57,600
User
I/Os
160
192
224
256
288
320
384
480
Array Size
10 x 10
12 x 12
14 x 14
16 x 16
18 x 18
20 x 20
24 x 24
30 x 30
* The rst number in the usable gates column assumes 48 gates per PFU (12 gates per four-input LUT/FF pair) for logic-only designs. The
second number assumes 30% of a design is RAM. PFUs used as RAM are counted at four gates per bit, with each PFU capable of
implementing a 16 x 4 RAM (or 256 gates) per PFU.






OR2C06A Datasheet, Funktion
ORCA Series 2 FPGAs
Programmable Logic Cells (continued))
Data Sheet
January 2002
A4
A3
A2
A1
A0
B4
B3
B2
B1
B0
CIN
C0
LSR
GSR
WD[3:0]
CK
CKEN
TRI
CARRY
A4
A3
QLUT3
A2
A1
CARRY
A3
A2
QLUT2
A1
A0
CARRY
B4
B3
QLUT1
B2
B1
CARRY
B3
B2
QLUT0
B1
B0
A4
B4
PFU_NAND
F3
C
WD3
F2
C
WD2
PFU_MUX
PFU_XOR
F1
C
WD1
F0
C
WD0
CC
D3 Q3
REG3
SR EN
D2 Q2
REG2
SR EN
C
D1 Q1
REG1
SR EN
D0 Q0
REG0
SR EN
C
C
Key: C = controlled by conguration RAM.
Figure 3. Simplified PFU Diagram
COUT
O4
O3
O2
O1
O0
TT
TT
TT
TT
CC
5-4573(F)
Figure 2 and Figure 3 show high-level and detailed
views of the ports in the PFU, respectively. The ports
are referenced with a two- to four-character sufx to a
PFU’s location. As mentioned, there are two 5-bit input
data buses (A[4:0] and B[4:0]) to the LUT, one 4-bit
input data bus (WD[3:0]) to the latches/FFs, and an
output data bus (O[4:0]).
Figure 3 shows the four latches/FFs (REG[3:0]) and the
64-bit look-up table (QLUT[3:0]) in the PFU. The PFU
does combinatorial logic in the LUT and sequential
logic in the latches/FFs. The LUT is static random
access memory (SRAM) and can be used for read/
write or read-only memory. The eight 3-state buffers
found in each PLC are also shown, although they actu-
ally reside external to the PFU.
Each latch/FF can accept data from the LUT. Alterna-
tively, the latches/FFs can accept direct data from
WD[3:0], eliminating the LUT delay if no combinatorial
function is needed. The LUT outputs can bypass the
latches/FFs, which reduces the delay out of the PFU. It
is possible to use the LUT and latches/FFs more or
less independently. For example, the latches/FFs can
be used as a 4-bit shift register, and the LUT can be
used to detect when a register has a particular pattern
in it.
6 Lattice Semiconductor

6 Page









OR2C06A pdf, datenblatt
ORCA Series 2 FPGAs
Data Sheet
January 2002
Programmable Logic Cells (continued)
Asynchronous Memory Modes—MA and MB
The LUT in the PFU can be congured as either read/
write or read-only memory. A read/write address
(A[3:0], B[3:0]), write data (WD[1:0], WD[3:2]), and two
write-enable (WE) ports are used for memory. In asyn-
chronous memory mode, each HLUT can be used as a
16 x 2 memory. Each HLUT is congured indepen-
dently, allowing functions such as a 16 x 2 memory in
one HLUT and a logic function of ve input variables or
less in the other HLUT.
Figure 12 illustrates the use of the LUT for a 16 x 4
memory. When the LUTs are used as memory, there
are independent address, input data, and output data
buses. If the LUT is used as a 16 x 4 read/write mem-
ory, the A[3:0] and B[3:0] ports are address inputs
(A[3:0]). The A4 and B4 ports are write-enable (WE)
signals. The WD[3:0] inputs are the data inputs. The
F[3:0] data outputs can be routed out on the O[4:0]
PFU outputs or to the latch/FF D[3:0] inputs.
WEA
A3
A2
A1
A0
WD3
WD2
WPE
WEB
WD1
WD0
B3
B2
B1
B0
A4 HLUTA
A3
A2
A1
A0
WD3
WD2 C0
B4 C0 HLUTB
WD1
WD0
B3
B2
B1
B0
F3
F2
F1
F0
5-2757(F).r3
Figure 12. MA/MB Mode—16 x 4 RAM
To increase memory word depth above 16 (e.g., 32 x
4), two or more PLCs can be used. The address and
write data inputs for the two or more PLCs are tied
together (bit by bit), and the data outputs are routed
through the four 3-statable BIDIs available in each PFU
and are then tied together (bit by bit).
The control signal of the 3-statable BIDIs, called a RAM
bank-enable, is created from a decode of upper
address bits. The RAM bank-enable is then used to
12
enable 4 bits of data from a PLC onto the read data
bus.
The ORCA Series 2 series also has a new AND func-
tion available for each PFU in RAM mode. The inputs to
this function are the write-enable (WE) signal and the
write-port enable (WPE) signal. The write-enable signal
is A4 for HLUTA and B4 for HLUTB, while the other
input into the AND gates for both HLUTs is the write-
port enable, input on C0 or CIN. Generally, the WPE
input is driven by the same RAM bank-enable signal
that controls the BIDIs in each PFU.
The selection of which RAM bank to write data into
does not require the use of LUTs from other PFUs, as
in previous ORCA architectures. This reduces the num-
ber of PFUs required for RAMs larger than 16 words in
depth. Note that if either HLUT is in MA/MB mode, then
the same WPE is active for both HLUTs.
To increase the memory’s word size (e.g., 16 x 8), two
or more PLCs are used again. The address, write-
enable, and write-port enable of the PLCs are tied
together (bit by bit), and the data is different for each
PLC. Increasing both the address locations and word
size is done by using a combination of these two tech-
niques.
The LUT can be used simultaneously for both memory
and a combinatorial logic function. Figure 13 shows the
use of a LUT implementing a 16 x 2 RAM (HLUTA) and
any function of up to ve input variables (HLUTB).
WEA
A3
A2
A1
A0
WD3
WPE
B4
B3
B2
B1
B0
A4
A3 QLUT3
A2
A1 QLUT2
A0
WD3
C0
B4
B3 QLUT1
B2
B1 QLUT0
B0
HLUTA
F3
F2
HLUTB
F0
5-2845(F).a.r1
Figure 13. MA/F5 Mode—16 x 2 Memory and One
Function of Five Input Variables
Lattice Semiconductor

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