A1015 Datasheet PDF - Shanghai
| Part Number | A1015 | |
| Description | Silicon PNP Transistor | |
| Manufacturers | Shanghai | |
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A1015
A1015 Silicon PNP Epitaxial Transistor
Description: The A1015 is designed for audio frequency general purpose amplifier
applications and driver stage amplifier applications
Features: ●Excellent hFE Linearity
●Complementary to C1815
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
Emitter
350um×350um
210±20um
110um×110um
100um×100um
Al
Au(As)
40um
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
ICBO VCB=-60V, IE=0
IEBO VEB=-5V, IC=0
Collector-Base Breakdown Voltage
BVCBO IC=-0.1mA,
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA,
Emitter-Base Breakdown Voltage
BVEBO IE=-0.1mA,
Min Max
-0.1
-0.1
-60
-50
-5.0
DC Current Gain
hFE VCE=-6V, IC=-2mA
150 600
Collector Saturation Voltage
VCE(sat) IC=-100mA,IB=-10mA
-0.30
Unit
uA
uA
V
V
V
V
May.2004
Version :0.0
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for A1015 electronic component. |
| Information | Total 1 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. 150mA, PNP Transistor - Toshiba [ Learn More ] | |
| Download | [ A1015.PDF Datasheet ] | |
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