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SPI11N60C3 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer SPI11N60C3
Beschreibung Cool MOS Power Transistor
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 16 Seiten
SPI11N60C3 Datasheet, Funktion
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
Periodic avalanche rated
PG-TO220FP PG-TO262
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO220-3-31
23
1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V
0.38
11 A
PG-TO220
Type
Package
SPP11N60C3
PG-TO220
SPI11N60C3
PG-TO262
SPA11N60C3 PG-TO220FP
SPA11N60C3E8185 PG-TO220
Ordering Code
Q67040-S4395
Q67042-S4403
Q67040-S4408
Marking
11N60C3
11N60C3
11N60C3
11N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
11 111)
7 71)
33 33
340 340
0.6 0.6
11 11
±20 ±20
±30 ±30
125 33
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3 . 2
Page 1
2009-11-27






SPI11N60C3 Datasheet, Funktion
2SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 0
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -1
10 -2
10 -3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
40
A
20V
10V
8V
32
28
24
20
16
12
8
4
7V
6,5V
6V
5,5V
5V
4,5V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
22
A 20V
8V
7V
18 7.5V
16
14
12
10
8
6
4
2
6V
5.5V
5V
4.5V
4V
0
0 3 6 9 12 15 18 21 V 27
VDS
Rev. 3 .2
Page 6
0
0
5 10 15 V 25
VDS
2007-08-30

6 Page









SPI11N60C3 pdf, datenblatt
SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
PG-TO-220-3-1, PG-TO-220-3-21
Rev. 3.2
Page 12
2009-11-27

12 Page





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