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PDF SPI08N50C3 Data sheet ( Hoja de datos )
| Número de pieza | SPI08N50C3 | |
| Descripción | Cool MOS Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPI08N50C3 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.6
7.6
V
Ω
A
• Periodic avalanche rated
P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
1 23
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP08N50C3
SPI08N50C3
SPA08N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4567
P-TO262-3-1 Q67040-S4568
P-TO220-3-31 Q67040-S4576
Marking
08N50C3
08N50C3
08N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
7.6
4.6
22.8
230
7.61)
4.61)
22.8
230
Unit
A
A
mJ
0.5 0.5
7.6 7.6
±20 ±20
±30 ±30
83 32
-55...+150
A
V
W
°C
Page 1
2003-06-27
1 page  
1 Power dissipation
Ptot = f (TC)
Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
2 Power dissipation FullPAK
Ptot = f (TC)
100 SPP08N50C3
W
80
70
60
50
40
30
20
10
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
35
W
25
20
15
10
5
00 20 40 60 80 100 120 °C 150
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
10 -1
10
-2
10
0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 1
10 2
V 10 3
VDS
Page 5
10 -1
10
-2
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 1
10 2 V 10 3
VDS
2003-06-27
5 Page 
P-TO-220-3-1
10 ±0.4
3.7 ±0.2
A
Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
B
1.27±0.13
4.44
0.05
C
2x 2.54
3x
0.75 ±0.1
1.17 ±0.22
0.25 M A B C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
0.5 ±0.1
2.51±0.2
Page 11
2003-06-27
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SPI08N50C3.PDF ] | |
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