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Número de pieza | SP8M7 | |
Descripción | Switching | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SP8M7 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Transistors
Switching
SP8M7
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
SP8M7
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
0.2±0.1
1.27
0.4±0.1
0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation (TC=25°C)
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 −30
±20 ±20
±5.0
±7.0
±20 ±28
1.6 −1.6
6.4 −28
22
150 150
−55 to +150 −55 to +150
Unit
V
V
A
A ∗1
A
A ∗1
W ∗2
°C
°C
zEquivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol
Rth (ch-A)
Limits
62.5
Unit
°C / W
∗
1/5
1 page Transistors
P-ch
zElectrical characteristic curves
10000
Ta=25°C
f=1MHz
VGS=0V
Ciss
1000
Coss
Crss
100
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
100
tf
td (off)
10
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
td (on)
tr
1
0.01 0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.2 Switching Characteristics
SP8M7
8
Ta=25°C
7 VDD= −15V
ID= −7A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0 5 10 15 20 25 30
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS= −10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristics
200
Ta=25°C
Pulsed
150
100
50 ID=−7.0A
ID=−3.5A
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=125°C
Ta=75°C
Ta=25°C
1 Ta= −25°C
VGS=0V
Pulsed
0.1
0.01
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
100 1000 1000
VGS= −10V
VGS= −4.5V
Pulsed
Pulsed
VGS= −4V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
100 Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
100 Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
5/5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SP8M7.PDF ] |
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