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Número de pieza | MRF1946 | |
Descripción | RF POWER TRANSISTORS NPN SILICON | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
Power Transistors
. . . designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment.
• High Common Emitter Power Gain
• Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60%
• Diffused Emitter Resistor Ballasting
• Characterized to 220 MHz
• Load Mismatch at High Line and Overdrive Conditions
Order this document
by MRF1946/D
MRF1946
MRF1946A
30 W, 136 – 220 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Junction Temperature
Tstg
TJ
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
16
36
4.0
8.0
100
0.57
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ICES
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
Symbol
RθJC
Min
16
36
4.0
—
40
CASE 211–07, STYLE 1
MRF1946
CASE 145A–09, STYLE 1
MRF1946A
Max
1.75
Typ Max
——
——
——
— 5.0
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mAdc
75 150 —
(continued)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF1946 MRF1946A
1
1 page PACKAGE DIMENSIONS
Q
S
A
U
M
1
4
M
RB
23
D
K
J
H
C
E SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
H
J
K
M
Q
R
S
U
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
INCHES
MIN MAX
0.960 0.990
0.370 0.390
0.229 0.281
0.215 0.235
0.085 0.105
0.150 0.108
0.004 0.006
0.395 0.405
40_ 50_
0.113 0.130
0.245 0.255
0.790 0.810
0.720 0.730
MILLIMETERS
MIN MAX
24.39 25.14
9.40 9.90
5.82 7.13
5.47 5.96
2.16 2.66
3.81 4.57
0.11 0.15
10.04 10.28
40_ 50_
2.88 3.30
6.23 6.47
20.07 20.57
18.29 18.54
CASE 211–07
ISSUE N
MRF1946
TA
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C EP
S SEATING
PLANE
INCHES
DIM MIN MAX
A 0.370 0.385
MILLIMETERS
MIN MAX
9.40 9.78
B 0.320 0.330 8.13 8.38
8–32UNC–2A
C 0.670 0.790 17.02 20.07
WRENCH FLAT
LU
D 0.215 0.235 5.46 5.97
E 0.070 ––– 1.78 –––
J 0.003 0.007 0.08 0.18
K 0.490 ––– 12.45 –––
L 0.055 0.070 1.40 1.78
M 45_NOM
45_NOM
3 DK
P ––– 0.050 ––– 1.27
R 0.299 0.307 7.59 7.80
S 0.158 0.178 4.01 4.52
B2
4
T 0.083 0.100 2.11 2.54
U 0.098 0.132 2.49 3.35
STYLE 1:
1 PIN 1. EMITTER
2. BASE
M 3. EMITTER
4. COLLECTOR
R
CASE 145A–09
ISSUE M
MRF1946A
MOTOROLA RF DEVICE DATA
MRF1946 MRF1946A
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MRF1946.PDF ] |
Número de pieza | Descripción | Fabricantes |
MRF1946 | NPN SILICON RF POWER TRANSISTOR | ASI |
MRF1946 | RF POWER TRANSISTORS NPN SILICON | Motorola Semiconductors |
MRF1946A | NPN SILICON RF POWER TRANSISTOR | ASI |
MRF1946A | Silicon NPN POWER TRANSISTOR | HGSemi |
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