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PDF SP0610T Data sheet ( Hoja de datos )
| Número de pieza | SP0610T | |
| Descripción | SIPMOS Small-Signal Transistor | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SP 0610T
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -1.0..-2.0V
Pin 1
G
Pin 2
S
Pin 3
D
Type
SP 0610T
Type
SP 0610T
VDS
-60 V
ID
-0.13 A
Ordering Code
Q67000-S088
RDS(on)
10 Ω
Package
SOT-23
Tape and Reel Information
E6327
Marking
sSF
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Continuous drain current
TA = 36 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
V
DGR
VGS
ID
IDpuls
Ptot
Values
-60
-60
± 20
-0.13
-0.52
0.36
Unit
V
A
W
Semiconductor Group
1
Sep-13-1996
1 page  
SP 0610T
Power dissipation
Ptot = ƒ(TA)
0.40
W
Ptot 0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ -10 V
-0.14
A
-0.12
ID -0.11
-0.10
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0.00
0
20 40 60 80 100 120 °C 160
TA
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Semiconductor Group
-71
V
-68
V
(BR)DSS
-66
-64
-62
-60
-58
-56
-54
-60 -20 20 60 100 °C 160
Tj
5 Sep-13-1996
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SP0610T.PDF ] | |
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