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Teilenummer | SP0610 |
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Beschreibung | SIPMOS Small-Signal Transistor | |
Hersteller | Siemens Semiconductor Group | |
Logo | ||
Gesamt 6 Seiten SIPMOS® Small-Signal Transistor
q VDS − 60 V
q ID − 0.18 A
q RDS(on) 10 Ω
q P channel
q Enhancement mode
SP 0610L
2
3
1
Type
Ordering Code Tape and Reel
Information
SP 0610 L Q67000-S065 bulk
Pin Configuration Marking Package
123
D G S SP0610L TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Continuous drain current, TA = 25 ˚C
Pulsed drain current,
TA = 25 ˚C
Max. power dissipation, TA = 25 ˚C
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
ID
ID puls
Ptot
Tj, Tstg
Values
− 60
− 60
± 20
− 0.18
− 0.72
0.63
− 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
RthJSR
–
–
≤ 200
–
E
55/150/56
K/W
–
SP 0610L
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = VGS, ID = 1 mA, (spread)
Forward characteristics of reverse diode
IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)
Drain current ID = f (TA)
parameter: VGS ≥ 10 V
Drain-source breakdown voltage
V(BR) DSS = b × V(BR)DSS (25 ˚C)
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ SP0610 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
SP0610 | SIPMOS Small-Signal Transistor | Siemens Semiconductor Group |
SP0610 | SIPMOS Small-Signal Transistor | Siemens Semiconductor Group |
SP0610L | SIPMOS Small-Signal Transistor | Siemens Semiconductor Group |
SP0610T | SIPMOS Small-Signal Transistor | Siemens Semiconductor Group |
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