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SP0610 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer SP0610
Beschreibung SIPMOS Small-Signal Transistor
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 6 Seiten
SP0610 Datasheet, Funktion
SIPMOS® Small-Signal Transistor
q VDS 60 V
q ID 0.18 A
q RDS(on) 10
q P channel
q Enhancement mode
SP 0610L
2
3
1
Type
Ordering Code Tape and Reel
Information
SP 0610 L Q67000-S065 bulk
Pin Configuration Marking Package
123
D G S SP0610L TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 k
Gate-source voltage
Continuous drain current, TA = 25 ˚C
Pulsed drain current,
TA = 25 ˚C
Max. power dissipation, TA = 25 ˚C
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
ID
ID puls
Ptot
Tj, Tstg
Values
60
60
± 20
0.18
0.72
0.63
55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
RthJSR
200
E
55/150/56
K/W






SP0610 Datasheet, Funktion
SP 0610L
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = VGS, ID = 1 mA, (spread)
Forward characteristics of reverse diode
IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)
Drain current ID = f (TA)
parameter: VGS 10 V
Drain-source breakdown voltage
V(BR) DSS = b × V(BR)DSS (25 ˚C)

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