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PDF 2EL2 Data sheet ( Hoja de datos )

Número de pieza 2EL2
Descripción BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Fabricantes Power Innovations Limited 
Logotipo Power Innovations Limited Logotipo



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No Preview Available ! 2EL2 Hoja de datos, Descripción, Manual

2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1998, Power Innovations Limited, UK
AUGUST 1998
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
CELL PACKAGE
(SIDE VIEW)
T(A)
V(BR)
DEVICE MINIMUM
V
2EL2
±245
2EL3
2EL4
V(BO)
MINIMUM
V
±265
±200
±215
V(BO)
MAXIMUM
V
±400
±265
±265
R(B)
q Rated for International Surge Wave Shapes
DEVICE
2EL2
2EL3
2EL4
ITU-T K28
(10/700)
ITSP
A
±125
±125
±125
GR-974-CORE
(10/1000)
ITSP
A
±100
±100
±100
q Gas Discharge Tube (GDT) Replacement
device symbol
T
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
q Planar Passivated Junctions in a Protected Cell Construction
Low Off-State Current
Extended Service Life
MD4XANA
q Soldered Copper Electrodes
High Current Capability
Cell Construction Short Circuits Under Excessive Current Conditions
description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the
generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93).
To conform to the specified environmental requirements, the 2ELx must be installed in a housing which
maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides. This 2ELx range consists of three voltage variants to meet various
maximum system voltage levels. They are guaranteed to voltage limit and withstand the listed international
lightning surges in both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to
each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the
silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability
of 10 A rms for 1 second. One of the 2ELx’s copper electrodes is specially shaped to promote a progressive
shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 2ELx in compression,
so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross
conditions the 2ELx will fail short circuit, providing maximum protection to the equipment.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK.
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2EL2 pdf
2EL2, 2EL3, 2EL4
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
AUGUST 1998
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.
PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1998, Power Innovations Limited
PRODUCT INFORMATION
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