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28F016SV Schematic ( PDF Datasheet ) - Intel

Teilenummer 28F016SV
Beschreibung 16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
Hersteller Intel
Logo Intel Logo 




Gesamt 30 Seiten
28F016SV Datasheet, Funktion
E
28F016SV
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
FlashFile™ MEMORY
Includes Commercial and Extended Temperature Specifications
n SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
n 65 ns Access Time
n 1 Million Erase Cycles per Block
n 30.8 MB/sec Burst Write Transfer Rate
n 0.48 MB/sec Sustainable Write Transfer
Rate
n Configurable x8 or x16 Operation
n 56-Lead TSOP and SSOP Type I
Packages
n Backwards-Compatible with 28F016SA,
28F008SA Command Set
n Revolutionary Architecture
Multiple Command Execution
Program during Erase
Command Super-Set of the Intel
28F008SA
Page Buffer Program
n 2 µA Typical Deep Power-Down
n 32 Independently Lockable Blocks
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power operation, user-selectable VPP voltage and high read/program performance, the
28F016SV enables the design of truly mobile, high-performance personal computing and communications
products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and
28F016SA 16-Mbit FlashFile memories), extended cycling, flexible VCC and VPP voltage (SmartVoltage
technology), fast program and read performance and selective block locking, provide a highly-flexible memory
component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.
The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V
and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor
interface. The flexible block locking option enables bundling of executable application software in a Resident
Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 µm ETOX IV process technology.
July 1997
Order Number: 290528-007
7/11/97 11:03 AM 29052807.DOC






28F016SV Datasheet, Funktion
28F016SV FlashFile™ MEMORY
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28F016SV pdf, datenblatt
28F016SV FlashFile™ MEMORY
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2.1 Lead Descriptions (Continued)
Symbol
RY/BY#
WP#
BYTE#
3/5#
VPP
VCC
GND
NC
Type
OPEN DRAIN
OUTPUT
INPUT
INPUT
INPUT
SUPPLY
SUPPLY
SUPPLY
Name and Function
READY/BUSY: Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# floating
indicates that the WSM is ready for new operations (or WSM has
completed all pending operations), or erase is suspended, or the device is
in deep power-down mode. This output is always active (i.e., not floated
to tri-state off when OE# or CE0#, CE1# are high), except if a RY/BY# Pin
Disable command is issued.
WRITE PROTECT: Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or erases. When WP# is high, all blocks can
be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
BYTE ENABLE: BYTE# low places device in x8 mode. All data is then
input or output on DQ0–7, and DQ8–15 float. Address A0 selects between
the high and low byte. BYTE# high places the device in x16 mode, and
turns off the A0 input buffer. Address A1, then becomes the lowest order
address.
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5V operation.
NOTE:
Reading the array with 3/5# high in a 5V system could damage the
device. Reference the power-up and reset timings (Section 5.7) for 3/5#
switching delay to valid data.
PROGRAM/ERASE POWER SUPPLY (12V ± 0.6V, 5V ± 0.5V) : For
erasing memory array blocks or writing words/bytes/pages into the flash
array. VPP = 5V ± 0.5V eliminates the need for a 12V converter, while
connection to 12V ± 0.6V maximizes Program/Erase Performance.
NOTE:
Successful completion of program and erase attempts is inhibited with
VPP at or below 1.5V. Program and erase attempts with VPP between 1.5V
and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious
results and should not be attempted.
DEVICE POWER SUPPLY (3.3V ± 0.3V, 5V ± 0.5V, 5.0 ± 0.25V):
To switch 3.3V to 5V (or vice versa), first ramp VCC down to GND, and
then power to the new VCC voltage.
Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NO CONNECT:
Lead may be driven or left floating.
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