Datenblatt-pdf.com


27512 Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer 27512
Beschreibung NMOS 512K 64K x 8 UV EPROM
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 11 Seiten
27512 Datasheet, Funktion
M27512
NMOS 512K (64K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
28
1
FDIP28W (F)
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
Figure 1. Logic Diagram
VCC
16
A0-A15
Table 1. Signal Names
A0 - A15
Q0 - Q7
E
GVPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable
Output Enable / Program Supply
Supply Voltage
Ground
E
GVPP
M27512
VSS
8
Q0-Q7
AI00765B
March 1995
1/11






27512 Datasheet, Funktion
M27512
Table 9. MARGIN MODE AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol Alt
Parameter
Test Condition
Min
tA9HVPH
tVPHEL
tA10HEH
tAS9
tVPS
tAS10
VA9 High to VPP High
VPP High to Chip Enable Low
VA10 High to Chip Enable
High (Set)
2
2
1
tA10LEH
tAS10
VA10 Low to Chip Enable High
(Reset)
1
tEXA10X
tAH10
Chip Enable Transition to
VA10 Transition
1
tEXVPX
tVPH
Chip Enable Transition to VPP
Transition
2
tVPXA9X
tAH9
VPP Transition to VA9
Transition
2
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Max
Unit
µs
µs
µs
µs
µs
µs
µs
Table 10. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol Alt
Parameter
Test Condition
Min Max Unit
tAVEL
tAS
Address Valid to Chip Enable
Low
2 µs
tQVEL
tDS Input Valid to Chip Enable Low
2 µs
tVCHEL
tVCS VCC High to Chip Enable Low
2 µs
tVPHEL
tOES VPP High to Chip Enable Low
2 µs
tVPLVPH
tPRT VPP Rise Time
50 ns
tELEH
tPW
Chip Enable Program Pulse
Width (Initial)
Note 2
0.95 1.05
ms
tELEH
tOPW
Chip Enable Program Pulse
Width (Overprogram)
Note 3
2.85 78.75
ms
tEHQX
tDH
Chip Enable High to Input
Transition
2 µs
tEHVPX
tOEH
Chip Enable High to VPP
Transition
2 µs
tVPLEL
tVR VPP Low to Chip Enable Low
2 µs
tELQV
tDV
Chip Enable Low to Output
Valid
1 µs
tEHQZ (4)
tDF
Chip Enable High to Output Hi-
Z
0 130 ns
tEHAX
tAH
Chip Enable High to Address
Transition
0 ns
Notes. 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. The Initial Program Pulse width tolerance is 1 ms ± 5%.
3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.
4. Sampled only, not 100% tested.
6/11

6 Page







SeitenGesamt 11 Seiten
PDF Download[ 27512 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
27512NMOS 512K 64K x 8 UV EPROMSTMicroelectronics
STMicroelectronics
27512512K Production and UV EPROMIntel
Intel

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche