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PDF SPN04N60C2 Data sheet ( Hoja de datos )
| Número de pieza | SPN04N60C2 | |
| Descripción | Cool MOS Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPN04N60C2 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in SOT 223
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
SPN04N60C2
Product Summary
VDS
RDS(on)
ID
600
0.95
0.8
V
Ω
A
SOT-223
4
Type
SPN04N60C2
Package
SOT-223
Ordering Code
Q67040-S4308
Marking
04N60C2
3
2
1 VPS05163
D,2/4
Maximum Ratings, at TA = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
ID
Pulsed drain current, tp limited by Tjmax
Reverse diode dv/dt
ID puls
dv/dt
IS=0.8A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation, TA = 25°C
Operating and storage temperature
VGS
Ptot
Tj , Tstg
G,1
Value
0.8
0.65
3
6
±20
1.8
-55... +150
S,3
Unit
A
V/ns
V
W
°C
Page 1
2002-07-29
1 page  
Final data
SPN04N60C2
1 Power dissipation
Ptot = f (TA)
SPN04N60C2
1.9
W
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 °C 160
TA
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA=25°C
10 1 SPN04N60C2
A
10 0
/ID
= V DS
R DS(on)
tp = 11.0µs
100 µs
2 Drain current
ID = f (TA)
parameter: VGS≥ 10 V
0.9 SPN04N60C2
A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 °C 160
TA
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 2 SPN04N60C2
K/W
10 1
1 ms
10 -1
10 -2
10 ms
DC
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
0
10 1
10 2 V 10 3
10
-2
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s 10 4
VDS
tp
Page 5
2002-07-29
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SPN04N60C2.PDF ] | |
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