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PDF SFH507 Data sheet ( Hoja de datos )
| Número de pieza | SFH507 | |
| Descripción | IR-Empfanger fur Fernbedienungen fur kurze Burst IR-Receiver for Remote Control Systems for Short Burst | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SFH 507
IR-Empfänger für Fernbedienungen (für kurze Burst)
IR-Receiver for Remote Control Systems (for Short Burst)
16.3
15.9
12.9
12.1
31.1
30.1
1.5
9.7
8.7
0.8 max.
Surface not flat
VOUT
VS
GND
SFH 507
GEX06910
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
Features
q Empfängermodul für Übertragungsprotokolle
mit kurzen Pulspaketen (N ≥ 6 Pulse pro Bit)
q Fotodiode mit integriertem Verstärker
q Gehäuse schwarz eingefärbt: Verguß optimiert
q Receiver module for transmission codes
with short bursts (N ≥ 6 pulses per bit)
q Photodiode with hybride integrated circuit
q Black epoxy resin: daylight filter optimized
für eine Wellenlänge von 950 nm
q Hohe Störsicherheit
q Geringe Stromaufnahme (0.5 mA typ.)
q 5 V Betriebsspannung
q Hohe Empfindlichkeit
q TTL und CMOS kompatibel
q Mögliche Datenübertragungsrate 2.4 kbit/s
for 950 nm
q High immunity against ambient light
q Low power consumption (0.5 mA typ.)
q 5 V supply voltage
q High sensitivity (internal shield case)
q TTL and CMOS compatibility
q 2.4 kbit/s data transmission possible
(N = 6, f0 = 56 kHz)
(N = 6, f0 = 56 kHz)
Anwendungen
q Empfänger für IR-Fernsteuerungen
Applications
q IR-remote control preamplifier module
Typ
Trägerfrequ. Bestellnr.
Typ
Trägerfrequ. Bestellnr.
Type
SFH 507-30
SFH 507-33
SFH 507-36
Carrier
Frequency
kHz
30
33
36
Ordering Code Type
Carrier
Frequency
kHz
Q62702-P1701 SFH 507-38 38
Q62702-P1702 SFH 507-40 40
Q62702-P1703 SFH 507-56 56
Ordering Code
Q62702-P1704
Q62702-P1705
Q62702-P1822
Semiconductor Group
1
05.97
1 page  
SFH 507
Sensitivity vs. electric field disturbance
Ee min = f (E), field strength of disturbance,
f = f0
1.0 OHF00217
mW/m 2
E e min
0.8
f (E) = f 0
Vertical directivity ϕy
-10 0
ϕ
-20 1.6
1.4
10 OHF00246
20
1.2
0.6 -30 1.0 30
0.4
f (E) = 10 kHz
0.2
0
0 0.4 0.8 1.2 kV/m 2.0
E
0.8
-40 40
0.6
-50 0.4 50
-60 60
-70 0.2 70
-80 80
-90 90
-0.6 -0.4 -0.2 0 0.2 0.4 0.6
Relative luminous sensitivity
Srel = f (λ), TA = 25 oC
1.0 OHF02193
S rel
0.8
Horizontal directivity ϕx
-10 0 10 OHF00247
ϕ
-20 1.6 20
1.4
1.2
0.6 -30 1.0 30
0.4
0.2
0.0
800 850 900 950 1000 1050 nm 1150
λ
Output pulse
Ton, Toff = f(Ee)
1.0
ms
Ton,Toff
0.8
OHF00245
Ton
0.8
-40 40
0.6
-50 0.4 50
-60 60
-70 0.2 70
-80 80
-90 90
-0.6 -0.4 -0.2 0 0.2 0.4 0.6
Relative sensitivity Ee min/Ee = f (f / f0)
f = f0 ± 5 %, ∆f (3 dB) = f0/7
1.0 OHF00219
E e min /E e
0.8
0.6
Toff
0.4
0.6
0.4
λ = 950 nm
0.2
0.2
0.0
10
-1
10 0
10 1
10 2 mW/m 2 10 4
Ee
Semiconductor Group
0
0.7 0.8 0.9 1.0 1.1 1.2 1.3
f /f0
5
Sensitivity vs. bright ambient
Ee min = f (E)
10 2
OHF00215
Correlation with ambient light sources
mW/m2 (disturbance effect) : 10 W/m2 ~_ 1.4 klx
E e min
(stand. illum. A, T= 2855 K) ~_ 8.2 klx
(daylight, T = 5900 K)
10 1
10 0
10
-1
10
-2
Ambient, λ = 950 nm
10-1 100 101 W/m 2 102
E
Sensitivity vs. supply volt. disturbances,
Ee min = f (∆VS RMS)
101 OHF00214
mW/m2
E e min
f =f0
10 kHz 1 kHz
10 0
100 Hz
10
-1
10
-2
10 -1
10 0
10 1
102 mV 103
∆V s RMS
Sensitivity vs. dark ambient
Tp out = f (Ee)
300
OHF00216
µs
Tp out
250
200
Input burst duration
150
100
λ = 950 nm
50
0
10
-1
10 0
10 1
102 mW/m 2 104
Ee
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SFH507.PDF ] | |
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