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SE1031W Schematic ( PDF Datasheet ) - SiGe Semiconductor Inc.

Teilenummer SE1031W
Beschreibung LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final
Hersteller SiGe Semiconductor Inc.
Logo SiGe Semiconductor  Inc. Logo 




Gesamt 7 Seiten
SE1031W Datasheet, Funktion
SE1031W
LightCharger2.5 Gb/s Transimpedance Amplifier LP
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-48 fibre optic modules and line termination
§ ATM over SONET/SDH
§ Gigabit Ethernet
§ Fibre Channel
Features
§ Single +3.3 V power supply
§ Power dissipation = 110 mW (typ)
§ Input nois e current = 360 nA rms when used with
a 0.5 pF detector
§ Transimpedance gain = 2.3 kinto a 50 load
(differential)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ Differential 50 outputs
§ Bandwidth (-3 dB) = 2.4 GHz
§ Wide data rate range = 50 Mb/s to 2.5 Gb/s
§ Constant photodiode reverse bias voltage = 1.5 V
(anode to input, cathode to VCC)
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+125°C
§ Equivalent to Nortel Networks AB89-A4A
Ordering Information
Type
SE1031W
Package
Bare Die
Remark
None
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1031 is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features differential outputs,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. A decoupling capacitor on
the supply is the only external circuitry required. A
system block diagram is shown after the functional
description, on page 3.
Noise performance is optimized for 2.5 Gb/s
operation, with a calculated rms noise based
sensitivity of –26 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.9 A/W, with an infinite extinction ratio
source.
SE1031
TzAmp
2.5 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50
50
OUTP
OUTN
54-DST-01 § Rev 1.3 § Apr 11/02
1 of 7






SE1031W Datasheet, Funktion
SE1031W
LightCharger2.5 Gb/s Transimpedance Amplifier LP
Final
Bondpad Configuration
The diagram below shows the bondpad configuration of the SE1031 Transimpedance Amplifier: Note that the
diagram is not to scale. Bondpad openings are 82 µm x 82 µm. There are three VCC and three VEE1 pads for ease
of wire bonding – the VCC and VEE1 pads respectively are connected on-chip and only one pad of each type is
required to be bonded out.
1.25 mm
VCC 1
10 VCC
TZ_IN 2
Top
View
34 56
VEE2 VEE1 VEE1 VEE1
9 OUTP
0.925
mm
8 OUTN
7
VCC
Applications Information
For optimum performance it is recommended that the device be used in differential mode with the circuit shown in the
diagram below.
Note that all VCC pads (1, 7, 10) are connected on-chip, as are the VEE1 pads (4, 5, 6), and only one pad of each
type is required to be bonded out. However, in order to minimize inductance for optimum high speed performance, it
is recommended that all power pads are wire bonded. The VEE2 pad is not connected on chip to VEE1 and must be
bonded out separately.
+3.3 V
1 nF min
PIN or APD
PIN or APD Bias
1 7 10
VCC
TZ Amplifier
9
SE1031
OUTP
2 TZ_IN
OUTN 8
VEE2
3
VEE1
456
1 nF min
To 50 O loads,
AC coupled
0V
54-DST-01 § Rev 1.3 § Apr 11/02
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