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SE103 Schematic ( PDF Datasheet ) - SiGe Semiconductor Inc.

Teilenummer SE103
Beschreibung LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final
Hersteller SiGe Semiconductor Inc.
Logo SiGe Semiconductor  Inc. Logo 




Gesamt 9 Seiten
SE103 Datasheet, Funktion
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-48 fibre optic modules and line termination
§ ATM optical receivers
§ Gigabit Ethernet
§ Fibre Channel
Features
§ Single +3.3 V power supply
§ Input noise current = 360 nA rms when used with
a 0.5 pF detector
§ Transimpedance gain = 2.3 kinto a 50 load
(differential)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ Differential 50 outputs
§ Bandwidth (-3 dB) = 2.4 GHz
§ Wide data rate range = 50 Mb/s to 2.5 Gb/s
§ Constant photodiode reverse bias voltage = 1.5 V
(anode to input, cathode to VCC)
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+125°C
§ Equivalent to Nortel Networks AB89-A2A
Ordering Information
Type
SE1030W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1030W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features differential outputs,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. A decoupling capacitor on
the supply is the only external circuitry required. A
system block diagram is shown after the functional
description, on page 3.
Noise performance is optimized for 2.5 Gb/s
operation, with a calculated rms noise based
sensitivity of –26 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.9 A/W, with an infinite extinction ratio
source.
SE1030
TzAmp
2.5 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator
Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50
50
OUTP
OUTN
43-DST-01 § Rev 1.5 § May 24/02
1 of 9






SE103 Datasheet, Funktion
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Bondpad Configuration
The bondpad center coordinates are referenced to the center of the lower left pad (pad 4). All dimensions are in
microns (µm).
Pad No.
1
2
3
4
5
6
7
8
9
10
11
Name
VCC
DNC
TZ_IN
VEE2
VEE1
VEE1
VEE1
VCC
OUTN
OUTP
VCC
X
Coordinate
(µm)
-307.0
-307.0
-307.0
0
134.0
364.0
498.0
697.0
697.0
697.0
697.0
Y
Coordinate
(µm)
698.0
583.0
334.0
0
0
0
0
0
174.0
304.0
698.0
43-DST-01 § Rev 1.5 § May 24/02
6 of 9

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