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Teilenummer | SE1020W |
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Beschreibung | 1.25 Gb/s Transimpedance Amplifier Product Preview | |
Hersteller | SiGe Semiconductor Inc. | |
Logo | ||
Gesamt 7 Seiten SE1020W
1.25 Gb/s Transimpedance Amplifier
Product Preview
Applications
Gigabit-Ethernet systems, test equipment
and modules
OC-24 fibre optic modules and line
termination
Fibre Channel optical systems
Features
Single +3.3 V power supply
Power dissipation = 110 mW (typ)
Input noise current = 180 nA rms when used
with a 0.7 pF detector
Transimpedance gain = 4.0 kΩ into a 50 Ω
load (differential)
On-chip automatic gain control gives input
current overload of 2.6 mA pk and max
output voltage swing of 300 mV pk-pk
Differential 50 Ω outputs
Bandwidth (-3 dB) = 1.2 GHz
Wide data rate range = 50 Mb/s to 1.25 Gb/s
Constant photodiode reverse bias voltage =
1.5 V (anode to input, cathode to VCC)
Minimal external components, supply
decoupling only
Operating junction temperature range =
-40°C to +125°C
Ordering Information
Type
SE1020W
Package
Bare Die
Remark
None
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance
optical transmitter and receiver functions, from
155 Mb/s up to 12.5 Gb/s.
SiGe Semiconductor’s SE1020W is a fully
integrated, silicon bipolar transimpedance
amplifier; providing wideband, low noise
preamplification of signal current from a
photodetector. It features differential outputs and
incorporates an automatic gain control
mechanism to increase dynamic range, allowing
input signals up to 2.6 mA peak. A decoupling
capacitor on the supply is the only external
circuitry required. A system block diagram is
shown after the functional description, on page 3.
SE1020
TzAmp
1.25 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50 Ω
50 Ω
OUTP
OUTN
42-DST-01 Rev 1.3 May 27/02
Confidential
1 of 7
SE1020W
1.25 Gb/s Transimpedance Amplifier
Product Preview
Bondpad Configuration
The diagram below shows the bondpad configuration of the SE1020W Transimpedance Amplifier: Note that
the diagram is not to scale. Bondpad openings are 82 µm x 82 µm. There are three VCC and three VEE1
pads for ease of wire bonding – the VCC and VEE1 pads respectively are connected on-chip and only one
pad of each type is required to be bonded out.
1.25 mm
VCC
1
10 VCC
TZ_IN 2
Top
View
9 OUTP
8 OUTN
0.925
mm
3456
7
VEE2 VEE1 VEE1 VEE1
VCC
Applications Information
For optimum performance it is recommended that the device be configured as in the circuit shown in the
diagram below.
Note that all VCC pads (1, 7, 10) are connected on-chip, as are the VEE1 pads (4, 5, 6),.and only one pad of
each type is required to be bonded out. However, in order to minimize inductance for optimum high speed
performance, it is recommended that all power pads are wire bonded. The VEE2 pad is not connected on
chip to VEE1 and must be bonded out separately.
+3.3 V
1 nF min
PIN or APD
PIN or APD Bias
1 7 10
VCC
2 TZ_IN
TZ Amplifier
SE1020W
9
OUTP
OUTN 8
VEE2
3
VEE1
456
1 nF min
To 50 Ω loads,
AC coupled
0V
42-DST-01 Rev 1.3 May 27/02
Confidential
6 of 7
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ SE1020W Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
SE1020W | 1.25 Gb/s Transimpedance Amplifier Product Preview | SiGe Semiconductor Inc. |
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