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OBTS917 Schematic ( PDF Datasheet ) - Siemens Semiconductor Group

Teilenummer OBTS917
Beschreibung Smart Lowside Power Switch
Hersteller Siemens Semiconductor Group
Logo Siemens Semiconductor Group Logo 




Gesamt 11 Seiten
OBTS917 Datasheet, Funktion
HITFET®BTS 917
Smart Lowside Power Switch
Features
Product Summary
Logic Level Input
Drain source voltage
Input Protection (ESD)
On-state resistance
Thermal Shutdown
Current limit
Overload protection
Nominal load current
Short circuit protection
Clamping energy
Overvoltage protection
Current limitation
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
100 m
1.5 A
3.5 A
1000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
1
IN
2
NC
dv/dt
limitation
Current
limitation
Overvoltage
protection
Vbb
+
LOAD
Drain
3
M
4 CC
RCC
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
HITFET®
5
Semiconductor Group
Page 1
14.07.1998






OBTS917 Datasheet, Funktion
Maximum allowable power dissipation
Ptot = f(Tc)
BTS 917
50
W
40
Ptot
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 150
150
On-state resistance
RON = f(Tj); ID= 3.5A; VIN=5V
BTS 917
On-state resistance
RON = f(Tj); ID=3.5A; VIN=10V
200
RDS(o1n5)0
125
100
max.
typ.
75
50
25
0
-50 -25 0 25 50 75 100 °C 150
Tj
Typ. input threshold voltage
VIN(th) = f(Tj); ID=0,7A; VDS=12V
250 2.0
V
200
RDS(on)
175
150
max.
1.6
VIN(th)
1.4
1.2
125
typ.
100
1.0
0.8
75 0.6
50 0.4
25 0.2
0
-50 -25 0 25 50 75 100 °C 150
Tj
Semiconductor Group
Page 6
0.0
-50 -25 0 25 50 75 100 °C 150
Tj
14.07.1998

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