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Teilenummer | NZT6717 |
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Beschreibung | NPN General Purpose Amplifier | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 4 Seiten Discrete POWER & Signal
Technologies
TN6717A
NZT6717
C
C
BE
TO-226
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 39.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6717A
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
1.0
8.0
50
RθJA Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
*NZ T6717
1.0
8.0
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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PDF Download | [ NZT6717 Schematic.PDF ] |
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