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NE334S01-T1 Schematic ( PDF Datasheet ) - NEC

Teilenummer NE334S01-T1
Beschreibung C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Hersteller NEC
Logo NEC Logo 




Gesamt 12 Seiten
NE334S01-T1 Datasheet, Funktion
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE334S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE334S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.25 dB TYP., Ga = 16.0 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 mm
ORDERING INFORMATION
PART NUMBER
NE334S01-T1
NE334S01-T1B
SUPPLYING FORM
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
MARKING
C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage VGS –3.0
Drain Current
ID IDSS
Total Power Dissipation
Ptot
300
Channel Temperature
Tch 125
Storage Temperature
Tstg –65 to +125
V
V
mA
mW
°C
°C
PACKAGE DIMENSIONS
(Unit: mm)
2.0 ± 0.2
1 2.0 ± 0.2
C2
4
3
0.65 TYP.
1.9 ± 0.2
1.6
0.125 ± 0.05
0.4 MAX.
4.0 ± 0.2
1. Source
2. Drain
3. Source
4. Gate
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
15
MAX.
2.5
20
0
Unit
V
mA
dBm
Document No. P11139EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
© 1996






NE334S01-T1 Datasheet, Funktion
NE334S01
AMP. PARAMETERS
VDS = 2 V, ID = 15 mA
FREQUENCY
MHz
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
16500
17000
17500
18000
GUmax
dB
41.82
26.36
23.09
21.91
20.95
19.00
17.88
16.89
16.47
15.83
15.26
14.68
14.08
13.59
13.19
12.78
12.34
11.99
11.66
11.46
11.37
11.30
11.19
11.14
10.92
10.82
10.80
10.67
10.60
10.74
10.78
11.05
10.92
GAmax
dB
15.01
14.21
13.37
12.86
12.36
12.06
11.98
11.92
11.79
11.70
11.29
11.17
11.30
11.20
11.55
|S21|2
dB
17.10
16.72
16.39
15.99
15.61
15.10
14.67
14.29
14.07
13.83
13.58
13.25
12.87
12.44
12.03
11.62
11.19
10.82
10.50
10.24
9.97
9.65
9.17
8.67
8.12
7.67
7.33
7.01
6.72
6.45
6.11
5.71
5.17
|S12|2
dB
–27.61
–26.05
–24.82
–23.94
–22.95
–22.49
–21.87
–21.41
–20.78
–20.36
–19.85
–19.40
–19.24
–18.94
–18.84
–18.57
–18.48
–18.28
–18.14
–18.05
–17.83
–17.73
–17.63
–17.81
–17.97
–18.12
–17.94
–17.99
–17.76
–17.68
–17.72
–17.46
–17.88
K
.10
.23
.39
.42
.45
.60
.69
.78
.79
.84
.87
.91
.96
.98
1.00
1.02
1.06
1.08
1.10
1.12
1.10
1.08
1.07
1.06
1.08
1.08
1.05
1.04
1.01
.98
.96
.89
.91
Delay
ns
.036
.036
.064
.042
.042
.046
.038
.038
.039
.040
.041
.043
.041
.039
.038
.036
.034
.033
.033
.034
.035
.038
.037
.035
.030
.025
.025
.027
.028
.033
.032
.037
.030
Mason’s U
dB
27.689
25.567
27.520
25.660
25.850
24.669
23.510
23.291
23.059
22.736
21.540
20.889
19.984
19.642
20.331
20.980
21.543
21.748
20.156
19.965
21.257
20.523
21.974
22.748
25.818
27.860
G1
dB
23.90
8.50
5.83
5.04
4.47
3.12
2.47
1.94
1.87
1.56
1.33
1.18
1.05
1.05
1.08
1.09
1.09
1.12
1.12
1.18
1.36
1.58
1.88
2.25
2.50
2.79
3.00
3.15
3.30
3.62
3.92
4.49
4.78
G2
dB
.82
1.13
.86
.88
.87
.78
.73
.65
.54
.44
.35
.24
.16
.11
.08
.06
.05
.05
.04
.04
.05
.08
.14
.22
.30
.37
.46
.51
.58
.68
.75
.85
.96
6

6 Page









NE334S01-T1 pdf, datenblatt
NE334S01
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5

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