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PDF NE325S01-T1 Data sheet ( Hoja de datos )

Número de pieza NE325S01-T1
Descripción C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Fabricantes NEC　
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C to KU BAND SUPER LOW NE325S01
NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• SUPER LOW NOISE FIGURE:
0.45 dB TYP at 12 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB TYP at 12 GHz
• GATE LENGTH: ≤ 0.20 µm
• GATE WIDTH: 200 µm
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE325S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise figure and high
associated gain make it suitable for commercial systems and
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V
ID = 10 mA
24
20
Ga
16
1.0 12
0.5
0
1
8
NF
2 4 6 8 10 14
Frequency, f (GHz)
4
20 30
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
SYMBOLS
VDS
ID
Pin
CHARACTERISTICS UNITS MIN TYP MAX
Drain to Source Voltage V
23
Drain Current
mA 10 20
Input Power
dBm
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NF1
GA1
IDSS
gm
VGS(off)
IGSO
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz
Saturated Drain Current, VDS = 2 V, VGS = 0 V
Transconductance, VDS = 2 V, ID = 10 mA
Gate to Source Cutoff Voltage, VDS = 2 V,ID = 100 µA
Gate to Source Leak Current, VGS = -3 V
UNITS
dB
dB
mA
mS
V
µA
NE325S01
S01
MIN TYP
0.45
11.0 12.5
20 60
45 60
-0.2 -0.7
0.5
MAX
0.55
90
-2.0
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories

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NE325S01-T1 pdf
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S01
2.0 ± 0.2
1
2
D
4
0.125 ± 0.05
3
0.65 TYP.
1.9 ± 0.2
1.6
0.4 MAX
4.0 ± 0.2
1. Source
2. Drain
3. Source
4. Gate
ORDERING INFORMATION
PART
NUMBER
SUPPLY FORM
NE325S01
Bulk
NE325S01-T1 Tape & Reel 1000 pcs./reel
NE325S01-T1B Tape & Reel 4000 pcs./reel
PACKAGE
OUTLINE
S01
S01
S01
NE325S01
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, ID = 10 mA
FREQ.
(GHz)
NFMIN GA
(dB) (dB)
ΓOPT
MAG ANG
Rn/50
2
0.29 20.0
0.93
14
0.38
4
0.30 18.3
0.80
29
0.33
6
0.32 16.5
0.65
48
0.25
8
0.35 15.0
0.49
72
0.18
10 0.40 13.6 0.36 102 0.11
12 0.45 12.5 0.27 139 0.08
14 0.53 12.0 0.24 -176 0.07
16 0.67 11.8 0.30 -122 0.10
18 0.83 11.5 0.47 -58 0.22
TYPICAL CONSTANT NOISE FIGURE
CIRCLE (VDS = 2 V, ID = 10 mA, f = 12 GHz)
0.6
0.2
0 0.2
-0.2
-0.6
1
2
5
*
Γopt
0.6
0.8
1.0
1.0 2.0
∞
-5
-2
-1
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Internet: http://WWW.CEL.COM
04/29/2002

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