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Teilenummer | NE25139U73 |
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Beschreibung | GENERAL PURPOSE DUAL-GATE GaAS MESFET | |
Hersteller | NEC | |
Logo | ||
Gesamt 7 Seiten GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
GPS
20 10
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10 5
f = 900 MHz
NF
0
0
5 10
Drain to Source Voltage, VDS (V)
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF
GPS
BVDSX
IDSS
VG1S (OFF)
VG2S (OFF)
IG1SS
IG2SS
|YFS|
CISS
CRSS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
MIN
16
13
5
-3.5
-3.5
18
0.5
NE25139
39
TYP
MAX
1.1 2.5
20
20 40
10
10
25 35
1.0 1.5
0.02 0.03
California Eastern Laboratories
NE25139
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
j10
0 10
S11
4 GHz
-j10
2150
-j25
j50
j100
j150
j250
+120˚
+150˚
+90˚
+60˚
+30˚
50
-j50
S22
100 150 250 .1 GHz S11
.1 GHz
+–180˚ S21
.1 GHz
S12
4 GHz
.5 .10 .15 .20
S12
.1 GHz
1.0
S22
4 GHz
-j250
-j150
Coordinates in Ohms
-150˚
Frequency in GHz
-j100 (VDS = 5 V, VG2S = 0 V, IDS = 10 mA)
-120˚
1.5
2.0
S21 2.5
-90˚
-60˚
.25 0˚
-30˚
NE25139
VDS = 5 V, VG2S = 0 V, IDS = 10 mA
FREQUENCY
(GHz)
0.1
0.2
0.4
0.6
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
MAG
1.0
1.0
0.99
0.97
0.94
0.92
0.82
0.69
0.60
0.51
0.51
0.63
S11
ANG
-4
-8
-15
-23
-35
-39
-61
-86
-110
-131
-147
-167
S21
MAG
ANG
1.96 174
1.92 169
1.91 158
1.90 148
1.90 132
1.90 126
1.88 99
1.52 71
1.41 45
1.39 19
1.37 -6
1.20 -47
S12
MAG
ANG
0.001
0.001
0.001
0.002
0.004
0.004
0.006
0.008
0.012
0.023
0.039
0.042
87
85
82
81
80
79
78
95
118
153
162
157
S22
MAG
ANG
0.96 -1
0.96 -2
0.95 -3
0.94 -3
0.94 -4
0.94 -5
0.94 -6
0.95 -9
0.96 -12
0.97 -18
0.97 -27
0.96 -42
K S21 MAG1
(dB) (dB)
0.47 5.8
0.51 5.7
0.70 5.6
1.14 5.6
1.18 5.6
1.49 5.6
2.03 5.5
2.21 3.6
1.34 3.0
0.32 2.9
0.04 2.1
0.07 1.6
32.9
32.8
32.8
27.5
24.2
22.6
19.2
16.6
17.2
17.8
15.1
14.6
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ NE25139U73 Schematic.PDF ] |
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