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PDF NE25139T1U71 Data sheet ( Hoja de datos )
| Número de pieza | NE25139T1U71 | |
| Descripción | GENERAL PURPOSE DUAL-GATE GaAS MESFET | |
| Fabricantes | NEC | |
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GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH GPS: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
GPS
20 10
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
10 5
f = 900 MHz
NF
0
0
5 10
Drain to Source Voltage, VDS (V)
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
NF
GPS
BVDSX
IDSS
VG1S (OFF)
VG2S (OFF)
IG1SS
IG2SS
|YFS|
CISS
CRSS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S = 0, ID = 10 µA
Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V
Gate 1 to Source Cutoff Voltage at VDS = 5 V,
VG2S = 0 V, ID = 100 µA
Gate 2 to Source Cutoff Voltage at VDS = 5 V,
VG1S = 0 V, ID = 100 µA
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1.0 kHz
Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
MIN
16
13
5
-3.5
-3.5
18
0.5
NE25139
39
TYP
MAX
1.1 2.5
20
20 40
10
10
25 35
1.0 1.5
0.02 0.03
California Eastern Laboratories
1 page  
NONLINEAR MODEL
SCHEMATIC
CAP
Cg2d
C = 0.15
NE25139
RES
Rd
R = 4.58
PORT
Pdrain
port = 2
PORT
P1
port = 3
IND
Lg2
L = 0.40
PORT
Pgate1
port = 1
IND
Lg1
L = 1.65
CAP
C12
C = 0.32
RES
Rg2
R = 1.44
CAP
Cg1d
C = 5.64e-03
CAP
Cg1s
C = 0.41
CAP
Cg2s
C = 0.39
RES
Rg1
R = 1.52
EEFET3
FET2
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
RES
R12
R = 1.13
EEFET3
FET1
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
RES
Rs
R = 5.79
RES
RDS
R = 711
CAP
CDS
C = 7.60e-02
IND
Ls
L = 1.78
UNITS
Parameter
capacitance
inductance
resistance
Units
picofarads
nanohenries
ohms
NOTES:
1. This UGW value scales the model parameters on page 1.
2. This N value is the number of gate fingers and scales the
model parameters on page 1.
PORT
P4
port = 4
MODEL RANGE
Frequency: 0.1 to 4 GHz
Bias:
VDS = 5 V, Vg1s= -0.785 V, Vg2s= 0 V, ID = 10 mA
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NE25139T1U71.PDF ] | |
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