(PDF) NE21935 Datasheet - NPN SILICON HI FREQUNCY TRANSISTOR

Número de pieza	NE21935
Descripción	NPN SILICON HI FREQUNCY TRANSISTOR
Fabricantes	Advanced
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No Preview Available ! NE21935 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 80 °C/W PACKAGE STYLE .100 4L PILL 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS ICBO VCB = 8.0 V IEBO VEB = 1.0 V hFE VCE = 8.0 V IC = 20 mA CCB VCB = 8.0 V f = 1.0 MHz fT \|S21E\| VCE = 8.0 V VCE = 8.0 V IC = 20 mA IC = 20 mA f = 1.0 GHz f = 2.0 GHz MINIMUM TYPICAL MAXIMUM 1.0 1.0 30 100 300 0.4 1.0 8.0 15.5 8.0 9.0 UNITS µA µA --- pF GHz dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF NE21935 Data sheet ( Hoja de datos )