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NE02100 Schematic ( PDF Datasheet ) - ETC

Teilenummer NE02100
Beschreibung NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Hersteller ETC
Logo ETC Logo 




Gesamt 12 Seiten
NE02100 Datasheet, Funktion
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
LOW NOISE FIGURE: 1.5 dB at 500 MHz
HIGH POWER GAIN: 12 dB at 2 GHz
LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
b e r sNEC's NE021 series of NPN silicon transistors provides eco-
P L E A S E N O T E : p a r t n u mnomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
T h e f o l l o wdi nagt a s h e e t a r eintermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC
gold, platinum, titanium, and platinum-silicide metallization
system to provide the utmost in reliability. NE02107 is avail-
able in both common-base and common-emitter configura-
tions and has been qualified for high-reliability space applica-
f r o m t h i s o t i v e :tions.
n o n p rNoEm0 2 1 0 0NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
N E 0 2 1 3 3 b e r sFREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
N E 0 2 1 3 9 p a r t n u mVCE = 10 V, IC = 5 mA
T h e f o l l o wdi nagt a s h e e t a r e500 1.2 18.60 .36 69 .14
1000
1.5 13.82 .31 124 .12
1500
2.0 11.83 .50 165 .05
2000
2.4
9.36 .44
-175
.06
2500
2.6
7.82 .52
-161
.10
t h i s3000
3.6
7.51 .68
-141
.14
fdr oi smc o n t i n u e d :3500
3.7
6.31 .71
-139
.21
VCE = 10 V, IC = 20 mA
N E 0 2 1 0 7 f o r500 1.8 21.32 .16 149 .15
N E 0 2 1 3 5 office1000
1.9 16.15 .33 169 .13
1500
2.4 13.50 .46
-179
.09
c a l l s a l e s2000
2.9 11.02 .53
-167
.08
2500
3.2
9.12 .57
-154
.14
3000
3.9
8.10 .62
-139
.27
dPelet aasi les .3500
4.3
6.48 .67
-134
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
California Eastern Laboratories






NE02100 Datasheet, Funktion
NE021 SERIES
TYPICAL COMMON BASE SCATTERING PARAMETERS (TA = 25°C)
j50
j25 S11
4 GHz
j10
S11
0.1 GHz
0 10
25
50 100
-j10
-j25
S22
4 GHz
-j50
j100
S22
0.1 GHz 0
Coordinates in Ohms
Frequency in GHz
-j100 (VCB = 10 V, IC = 20 mA)
120˚
150˚
90˚
S12
4 GHz
60˚
30˚
180˚
S21
4 GHz
S12
0.1 GHz 0.5 .10 .15 .20 .25 0˚
0.4
S21
0.1 GHz
0.8
-150˚ 1.2 -30˚
1.6
-120˚
S212.0
-90˚
-60˚
NE02107B
VCB = 10 V, IC = 5 mA
FREQUENCY
S11
S21 S12
S22 K MAG1
(MHz)
MAG ANG
MAG ANG
MAG ANG
MAG ANG
(dB)
100
500
1000
1500
2000
2500
3000
3500
4000
.79 175
.79 170
.79 163
.83 157
.83 149
.87 145
.87 136
.87 126
.86 117
1.77 -10
1.78 -24
1.72 -44
1.71 -64
1.57 -87
1.53 -99
1.40 -122
1.21 -140
1.12 -164
.01 106
.01 111
.01 117
.03 109
.06 106
.08 103
.11 95
.13 86
.17 76
1.01 -9
1.02 -22
1.05 -40
1.09 -58
1.09 -75
1.08 -81
1.11 -96
1.10 -111
1.08 -125
-0.477
-0.808
-1.645
-1.076
-0.782
-0.574
-0.484
-0.427
-0.180
22.480
22.504
22.355
17.559
14.177
12.816
11.047
9.688
8.188
VCB = 10 V, IC = 10 mA
100 .88 177
500 .88 171
1000
.87 164
1500
.90 159
2000
.92 152
2500
.95 144
3000
.96 135
3500
.96 125
4000
.95 116
1.84 -6
1.84 -19
1.83 -38
1.82 -57
1.72 -76
1.68 -92
1.57 -113
1.45 -135
1.33 -156
.01 -31
.01 112
.01 132
.03 118
.06 117
.08 108
.12 98
.15 88
.18 77
1.01 -6
1.00 -18
1.05 -36
1.08 -53
1.10 -69
1.09 -81
1.13 -96
1.12 -111
1.10 -126
0.671
-0.431
-1.429
-0.950
-0.857
-0.707
-0.601
-0.458
-0.317
22.648
22.648
22.625
17.830
14.574
13.222
11.167
9.853
8.686
VCB = 10 V, IC = 20 mA
100 .92 176
500 .93 171
1000
.92 164
1500
.96 159
2000
.97 152
2500
1.01 142
3000
1.02 132
3500
1.03 121
4000
1.02 112
1.90 -6
1.89 -19
1.89 -37
1.88 -55
1.81 -75
1.75 -90
1.67 -110
1.55 -132
1.42 -154
.01 56
.01 139
.01 129
.03 126
.06 119
.09 110
.12 100
.15 89
.18 79
1.02 -6
1.01 -18
1.05 -36
1.09 -53
1.10 -69
1.09 -80
1.13 -95
1.13 -110
1.12 -125
0.315
-0.850
-1.189
-0.960
-0.832
-0.727
-0.658
-0.532
-0.388
22.788
22.765
22.765
17.970
14.795
12.888
11.435
10.142
8.970
VCB = 10 V, IC = 40 mA
100 .95 176
600 .94 171
1000
.94 163
1500
.98 158
2000
.99 151
2500
1.04 141
3000
1.05 132
3500
1.05 120
4000
1.03 111
1.93 -7
1.91 -20
1.91 -38
1.90 -57
1.83 -77
1.81 -92
1.72 -115
1.58 -136
1.46 -157
.01 -74
.01 116
.01 133
.03 126
.06 119
.09 111
.12 100
.15 88
.18 77
1.02 -7
1.01 -19
1.05 -36
1.09 -53
1.10 -69
1.09 -81
1.13 -97
1.13 -113
1.10 -127
0.239
-0.583
-1.140
-0.901
-0.798
-0.727
-0.591
-0.502
-0.341
22.856
22.810
22.810
18.016
14.843
13.034
11.563
10.226
9.091
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | | 2 - |S11| 2 - |S22| 2 , = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|

6 Page









NE02100 pdf, datenblatt
NE021 SERIES
PACKAGE OUTLINE 35
(MICRO-X)
0.5±0.06
C
E
3.8 MIN
ALL LEADS
B
+0.06
0.1 -0.04
E
2.55±0.2
φ2.1
45˚
1.8 MAX
0.55
PACKAGE OUTLINE 39
(SOT-23)
+0.2
2.8 -0.3
+0.2
1.5 -0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9 ± 0.2 0.95
0.85
2
3
1.9
1
+0.10
0.6 -0.05
4
1.1+-00..21 0.8
0.16
+0.10
-0.06
0 to 0.1
LEAD
CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
PACKAGE OUTLINE 39
RECOMMENDED P.C.B. LAYOUT
2.4
23
1.9
1
1.0
4
1.0
ORDERING INFORMATION
PART NUMBER
NE02100
NE02107/NE02107B
NE02133-T1B
NE02135
NE02139-T1
QUANTITY
100
1
3000
1
3000
PACKAGING
Waffle Pack
Hard Pack
Tape & Reel
ESD Bag
Tape & Reel
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
08/05/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.

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