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PDF NTE72 Data sheet ( Hoja de datos )
| Número de pieza | NTE72 | |
| Descripción | Silicon NPN Transistor High Current Amp / Fast Switch | |
| Fabricantes | NTE Electronics | |
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Hay una vista previa y un enlace de descarga de NTE72 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE72
Silicon NPN Transistor
High Current Amp, Fast Switch
Features:
D High Power: 100W @ TC = +50°C, VCE = 40V
D High Voltage: VCEO = 80V Min
D High Current Saturation Voltage: VCE(sat) = 1.5V @ 10A
D High Frequency: fT = 30MHz Min
D Isolated Collector Package, No Isolating hardware Required
Absolute Maximum Ratings: (Note 1)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Power Dissipation (TC = +50°C, VCE = 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Lead Temperature (During Soldering, 60sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may
be impaired.
Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.
Electrical Characteistics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
VCEO(sus) IC = 200mA, IB = 0, Notes 2 & 3
V(BR)CES) IC = 1mA, VBE = 0
V(BR)EBO IE = 1mA, IC = 0
DC Pulse Current Gain (Note 3)
hFE IC = 100mA, VCE = 5V
IC = 5A, VCE = 5V
IC = 5A, VCE = 5V, TC = –55°C
IC = 10A, VCE = 5V
Min Typ Max Unit
80 – – V
100 – – V
6––V
50 95 –
70 108 200
35 51 –
45 91 –
Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.
Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE72.PDF ] | |
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