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Número de pieza | PMBFJ309 | |
Descripción | N-channel silicon field-effect transistors | |
Fabricantes | Philips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PMBFJ309 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect
transistors
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Sep 11
1 page Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
DYNAMIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Cis input capacitance
Crs reverse transfer capacitance
gis common source input
conductance
gfs common source transfer
conductance
grs common source reverse
conductance
gos common source output
conductance
Vn equivalent input noise voltage
CONDITIONS
VDS = 10 V; VGS = −10 V; f = 1 MHz
VDS = 10 V; VGS = 0; Tamb = 25 °C
VDS = 0; VGS = −10 V; f = 1 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 Hz
TYP.
3
6
1.3
200
3
13
12
−30
−450
150
400
6
MAX.
5
−
2.5
−
−
−
−
−
−
−
−
−
UNIT
pF
pF
pF
µS
mS
mS
mS
µS
µS
µS
µS
nV/√Hz
handbook,5h0alfpage
IDSS
(mA)
40
MCD220
30
20
10
0
0 −1 −2 −3 −4
VGSoff (V)
VDS = 10 V; Tj = 25 °C.
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
handbook,2h0alfpage
yfs
(mS)
16
MCD219
12
8
4
0
0 −2 −4 −6 −8
VGSoff (V)
VDS = 10 V; ID = 10 mA; Tj = 25 °C.
Fig.4 Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
1996 Sep 11
5
5 Page Philips Semiconductors
N-channel silicon field-effect transistors
PACKAGE OUTLINE
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
handbook, full pagewidth
0.55
0.45
0.150
0.090
10 o
max
0.1
max
10 o
max
1.1
max 30o
max
3.0
2.8
1.9 B
0.95
A 0.2 M A
21
1.4 2.5
1.2 max
3
0.48
0.38
0.1 M A B MBC846
TOP VIEW
Dimensions in mm.
Fig.22 SOT 23.
1996 Sep 11
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet PMBFJ309.PDF ] |
Número de pieza | Descripción | Fabricantes |
PMBFJ308 | N-channel silicon field-effect transistors | Philips |
PMBFJ309 | N-channel silicon field-effect transistors | Philips |
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