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NNCD12E Schematic ( PDF Datasheet ) - NEC

Teilenummer NNCD12E
Beschreibung ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE
Hersteller NEC
Logo NEC Logo 




Gesamt 8 Seiten
NNCD12E Datasheet, Funktion
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3E to NNCD12E
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold
Package having allowable power dissipation of 200 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
1.5
0.65 +–00..115
2
13
Marking
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Tj
Storage Temperature
Tstg
200 mW
100 W (tT = 10 µs 1 pulse)
150 °C
–55 °C to +150 °C
Fig. 6
PIN CONNECTION
1. NC
2. Anode
3. Cathode
SC-59 (EIAJ)
Document No. D11773EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
© 1996






NNCD12E Datasheet, Funktion
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor device
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor device
NNCD3.3E to NNCD12E
Document No.
C11745E
MEI-1201
C11531E
C10535E
MEI-1202
6

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