|
|
PDF MMUN2111LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMUN2111LT1 | |
| Descripción | Bias Resistor Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MMUN2111LT1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
THERMAL CHARACTERISTICS
50
50
100
Characteristic
Symbol
Max
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
RθJA
508 (Note 1.)
311 (Note 2.)
Thermal Resistance –
Junction-to-Lead
RθJL
174 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C/W
°C/W
°C
MMUN2111LT1 Series
MMUN2111LT1
SERIES
3
1
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKINGDIAGRAM
A6x M
A6x = Device Marking
x = A – L(See Page 2)
M = Date Code
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of this
data sheet.
MMUN2111S-1/11
1 page  
10
IC/IBĂ=Ă10
1
LESHAN RADIO COMPANY, LTD.
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
TAĂ=Ă-25°C
25°C
75°C
1000
100
VCE = 10 V
TAĂ=Ă75°C
25°C
-25°C
ā0.1
ā0.01
0
4
3
2
1
0
0
ā20 ā40 ā60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
ā80 1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
f = 1 MHz
lE = 0 V
TA = 25°C
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
100 75°C 25°C
TAĂ=Ă-25°C
10
1
ā0.1
ā0.01 VO = 5 V
ā0.001 0 1 ā2 ā3 ā4 ā5 ā6 ā7 ā8 ā9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TAĂ=Ă-25°C
10 25°C
75°C
1
ā0.1 0 10
ā20 ā30 ā40 ā50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
MMUN2111S–5/11
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MMUN2111LT1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MMUN2111LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |  Motorola Semiconductors |
| MMUN2111LT1 | PNP SILICON BIAS RESISTOR TRANSISTOR |  ON |
| MMUN2111LT1 | Bias Resistor Transistors | Leshan Radio Company |
| MMUN2111LT1G | Bias Resistor Transistors |  ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |