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MMSF5P02HD Schematic ( PDF Datasheet ) - Motorola Semiconductors

Teilenummer MMSF5P02HD
Beschreibung SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS
Hersteller Motorola Semiconductors
Logo Motorola Semiconductors Logo 




Gesamt 12 Seiten
MMSF5P02HD Datasheet, Funktion
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
MiniMOSdevices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage transients. G
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
Order this document
by MMSF5P02HD/D
MMSF5P02HD
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
8.7 AMPERES
20 VOLTS
RDS(on) = 0.03 OHM
D
S
CASE 751–05, Style 13
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
DEVICE MARKING
ORDERING INFORMATION
S5P02H
Device
MMSF5P02HDR2
Reel Size
13
Tape Width
12 mm embossed tape
Quantity
4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1






MMSF5P02HD Datasheet, Funktion
MMSF5P02HD
5.0
4.0
QT
10
8.0
VDS
3.0
Q1
2.0
Q2
VGS
6.0
4.0
1.0
Q3
TJ = 25°C
ID = 6.4 A
2.0
00
0 4.0 8.0 12 16 20 24 28
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
1000
TJ = 25°C
ID = 1.0 A
VDD = 6.0 V
VGS = 4.5 V
100
td(off)
tf
tr
td(on)
10
1.0
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
7.0
6.0
TJ = 25°C
5.0 VGS = 0 V
4.0
3.0
2.0
1.0
0
0.4
0.5 0.6 0.7 0.8
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.9
Figure 10. Diode Forward Voltage versus
Current
6 Motorola TMOS Power MOSFET Transistor Device Data

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MMSF5P02HD pdf, datenblatt
MMSF5P02HD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
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P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
Mfax is a trademark of Motorola, Inc.
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: [email protected] – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://www.mot.com/SPS/
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