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MMBTH81 Schematic ( PDF Datasheet ) - Fairchild

Teilenummer MMBTH81
Beschreibung PNP RF Transistor
Hersteller Fairchild
Logo Fairchild Logo 




Gesamt 4 Seiten
MMBTH81 Datasheet, Funktion
Discrete POWER & Signal
Technologies
MPSH81
MMBTH81
C
C
EB
TO-92
SOT-23
Mark: 3D
E
B
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
20
VCBO
Collector-Base Voltage
20
VEBO
Emitter-Base Voltage
3.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH81
350
2.8
125
357
*MMBTH81
225
1.8
556
Units
mW
mW /°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation
H81, Rev B





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