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PDF MMBTH10L Data sheet ( Hoja de datos )
| Número de pieza | MMBTH10L | |
| Descripción | VHF/UHF Transistor | |
| Fabricantes | ON | |
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Hay una vista previa y un enlace de descarga de MMBTH10L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MMBTH10LT1,
MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking:
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
Characteristic
Symbol
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1)
RθJA
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
−55 to
+150
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
CASE 318
SOT−23
STYLE 6
ORDERING INFORMATION
Device
Package
Shipping†
MMBTH10LT1
MMBTH10LT1G
MMBTH10−4LT1
SOT−23
SOT−23
(Pb−Free)
SOT−23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
1
Publication Order Number:
MMBTH10LT1/D
1 page  
MMBTH10LT1, MMBTH10−4LT1
PACKAGE DIMENSIONS
SOT−23
(TO−236AB)
CASE 318−08
ISSUE AH
A
L
3
BS
12
VG
C
DH
K
J
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 6:
PIN 1.
2.
3.
BASE
EMITTER
COLLECTOR
0.95
0.037
0.95
0.037
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
Figure 9. SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBTH10L.PDF ] | |
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