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PDF MMBTA70LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA70LT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–40
–4.0
–100
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
mAdc
MMBTA70LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA70LT1 = M2C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –30Vdc, I E = 0)
ON CHARACTERISTICS
DC Current Gain(I C = –5.0mAdc, V CE = –10 Vdc)
Collector–Emitter Saturation Voltage(I C = –10mAdc, I B = –1.0 mAdc)
V (BR)CEO
V (BR)EBO
I CBO
hFE
VCE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(I C = –5.0mAdc, V CE= –10Vdc, f = 100MHz)
Output Capacitance(V CB = –10Vdc, I E = 0, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
fT
C obo
Min
–40
–4.0
—
40
––
125
––
Max Unit
–– Vdc
—
–100
Vdc
nAdc
400
–0.25
––
Vdc
–– MHz
4.0 pF
M31–1/5
1 page  
LESHAN RADIO COMPANY, LTD.
MMBTA70LT1
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
0.01
0.01 0.02
0.05 0.1
SINGLE PULSE
FIGURE 19
P (pk)
t1
t2
DUTY CYCLE, D = t 1 /t 2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1 (SEE AN–569)
Z θJA(t) = r(t) • R θJA
T J(pk) – T A = P (pk) Z θJA(t)
0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
t, TIME (ms)
Figure 17. Thermal Response
10 4
V CC = 30 V
10 3
10 2
I CEO
10 1
I CBO
AND
10 0 I CEX @ V BE(off) = 3.0 V
10 –1
10 2
–40 –20
0
20 40 60 80 100 120 140 160
T J , JUNCTION TEMPERATURE (°C)
Figure 18. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal response
the normalized effective transient thermal resistance of Figure 17 was
calculated for various duty cycles.
To find Z θJA(t) , multiply the value obtained from Figure 17 by the steady
state value R θJA .
Example:
Dissipating 2.0 watts peak under the following conditions:
t 1 = 1.0 ms, t 2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
∆ T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
M31–5/5
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| PDF Descargar | [ Datasheet MMBTA70LT1.PDF ] | |
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