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PDF MMBT5550LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT5550LT1 | |
| Descripción | High Voltage Transistors(NPN Silicon) | |
| Fabricantes | ON | |
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MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol 5550 5551 Unit
Collector −Emitter Voltage
VCEO 140 160 Vdc
Collector −Base Voltage
VCBO 160 180 Vdc
Emitter −Base Voltage
VEBO 6.0 Vdc
Collector Current − Continuous
IC 600 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Symbol
PD
Max Unit
225www.DataSheemt4UW.com
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
−55 to +150
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−23 (TO−236)
CASE 318
STYLE 6
xxxM
xxx = MMBT550LT1 = M1F,
MMBT5551LT1, LT3, LT1G = G1
M = Month Code
ORDERING INFORMATION
Device
MMBT5550LT1
Package
SOT−23
Shipping†
3000 Tape & Reel
MMBT5550LT1G
MMBT5551LT1
MMBT5551LT1G
MMBT5551LT3
MMBT5551LT3G
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 3000 Tape & Reel
SOT−23 3000 Tape & Reel
(Pb−Free)
SOT−23 10,000 Tape & Reel
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 4
1
Publication Order Number:
MMBT5550LT1/D
1 page  
MMBT5550LT1, MMBT5551LT1
PACKAGE DIMENSIONS
SOT−23−3 (TO−236)
CASE 318−08
ISSUE AK
A
L
3
BS
12
VG
C
DH
K
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
INCHES
DIM MIN
MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
STYLE 6:
PIN 1.
2.
3.
BASE
EMITTER
COLLECTOR
MILLIMETERS
MIN MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBT5550LT1.PDF ] | |
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