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PDF MMBT4355 Data sheet ( Hoja de datos )
| Número de pieza | MMBT4355 | |
| Descripción | PNP General Purpose Amplifier | |
| Fabricantes | Fairchild | |
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Discrete POWER & Signal
Technologies
PN4355
MMBT4355
C
C
BE
TO-92
SOT-23
Mark: 81
E
B
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
10
IC Collector Current - Continuous
800
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN4355
625
5.0
83.3
*MMBT4355
350
2.8
200 357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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| PDF Descargar | [ Datasheet MMBT4355.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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