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PDF MMBFJ309 Data sheet ( Hoja de datos )
| Número de pieza | MMBFJ309 | |
| Descripción | N-Channel RF Amplifier | |
| Fabricantes | Fairchild | |
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January 2015
MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Description
This device is designed for VHF/UHF amplifier, oscil-
lator and mixer applications. As a common gate
amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz
can be realized. Sourced from process 92. Source &
Drain are interchangeable.
G
SOT-23
S
Note: Source & Drain
D are interchangeable
Ordering Information
Part Number
MMBFJ309
MMBFJ310
Top Mark
6U
6T
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
-25
10
-55 to 150
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
Total Device Dissipation
PD Derate Above 25°C
350 mW
2.8 mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
357 °C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Parameter Interactions
Figure 15. Leakage Current vs. Voltage
Figure 14. Transconductance vs. Drain Current
700
600
500
400 SOT-23
300
200
100
0
0 25 50 75 100 125 150
TEMPERATURE ( oC)
Figure 16. Power Dissipation vs.
Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet MMBFJ309.PDF ] | |
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