DataSheet.es    


PDF MMBD354LT1 Data sheet ( Hoja de datos )

Número de pieza MMBD354LT1
Descripción Dual Hot Carrier Mixer Diodes
Fabricantes ON 
Logotipo ON Logotipo



Hay una vista previa y un enlace de descarga de MMBD354LT1 (archivo pdf) en la parte inferior de esta página.


Total 3 Páginas

No Preview Available ! MMBD354LT1 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
MMBD352LT1,
MMBD353LT1,
MMBD354LT1,
MMBD355LT1
Dual Hot Carrier Mixer
Diodes
These devices are designed primarily for UHF mixer applications
but are suitable also for use in detector and ultrafast switching
circuits.
Features
Very Low Capacitance Less Than 1.0 pF @ Zero V
Low Forward Voltage 0.5 V (Typ) @ IF = 10 mA
PbFree Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Continuous Reverse Voltage
THERMAL CHARACTERISTICS
VR 7.0 VCC
Characteristic
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, JunctiontoAmbient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
1
2
3
SOT23 (TO236)
CASE 318
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MMBD352LT1
STYLE 11
1
CATHODE 3
CATHODE/ANODE
2
ANODE
MMBD353LT1
STYLE 19
3
CATHODE
1 ANODE
2 ANODE
MMBD354LT1
STYLE 9
ANODE 3
1 CATHODE
2 CATHODE
MMBD355LT1
STYLE 12
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
(EACH DIODE)
Rating
Symbol Min Max Unit
Forward Voltage
(IF = 10 mAdc)
VF 0.60 V
Reverse Leakage Current (Note 3)
(VR = 3.0 V)
(VR = 7.0 V)
IR
0.25
10
Capacitance
(VR = 0 V, f = 1.0 MHz)
C 1.0
3. For each individual diode while the second diode is unbiased.
mA
pF
© Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 6
1
Mxx M G
G
1
Mxx = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the
package dimensions section on page 2 of this data sheet.
Publication Order Number:
MMBD352LT1/D

1 page





PáginasTotal 3 Páginas
PDF Descargar[ Datasheet MMBD354LT1.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MMBD354LT1Dual Hot Carrier Mixer DiodesON
ON
MMBD354LT1Dual Hot Carrier Mixer DiodesLeshan Radio Company
Leshan Radio Company
MMBD354LT1(MMBD35xLT1) Dual Hot Carrier Mixer DiodesMotorola Semiconductors
Motorola Semiconductors
MMBD354LT1GDual Hot Carrier Mixer DiodesON Semiconductor
ON Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar