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PDF MM018-06L Data sheet ( Hoja de datos )

Número de pieza MM018-06L
Descripción 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
Fabricantes Microsemi 
Logotipo Microsemi Logotipo



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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MM118-XX
Features
SERIES
Available in Low Conduction Loss Class as MM118-xxL or Fast
Switching Class as MM118-xxF
600 / 1200 Volts
Compact and rugged construction offering weight and space savings
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T”suffix to part number, see option below)
HPM (Hermetic Power Module)
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
Additional voltage ratings or terminations available upon request
150 Amps
3 PHASE N-CHANNEL
INSULATED GATE
BIPOLAR
TRANSISTOR (IGBT)
BRIDGE
Maximum Ratings per switch @ 25°C (unless otherwise specified)
PART NUMBER
SYMBOL
MM118-06 MM118-12
Collector-to-Emitter Breakdown Voltage (Gate shorted to
Emitter), @ Tj25°C
Collector-to-Gate Breakdown Voltage @ Tj25°C, RGS= 1
M
Gate-to-Emitter Voltage
continuous
transient
Continuous Collector Current
25°C
Tj=
Tj= 90°C
Peak Collector Current, pulsewidth limited by Tj max
Power Dissipation
Thermal resistance, junction to base
per switch
BVCES
600 V
1200 V
BVCGR
600 V
1200 V
VGES
VGEM
IC25
IC90
+/- 20 V
+/- 30 V
60 A
32 A
+/- 20 V
+/- 30 V
52 A
33 A
ICM
PD
RΘ jc, max
RΘ , typ
120 A
165 W
104 A
165 W
0.75°C/W
0.5°C/W
0.75°C/W
0.5°C/W
Mechanical Outline
Datasheet# MSC0321A

1 page





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