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Descripción Power Transistor
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJH16006A/D
Designer's Data Sheet
NPN Silicon Power Transistor
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Features:
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
Collector–Emitter Voltage — VCEV = 1000 Vdc
Fast Turn–Off Times
80 ns Inductive Fall Time — 100_C (Typ)
120 ns Inductive Crossover Time — 100_C (Typ)
800 ns Inductive Storage Time — 100_C (Typ)
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Extended FBSOA Rating Using Ultra–fast Rectifiers
Extremely High RBSOA Capability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCEV
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
RθJC
TL
Value
500
1000
6
8
16
6
12
125
50
1
– 55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max Unit
1 _C/W
275 _C
MJH16006A
POWER TRANSISTORS
8 AMPERES
500 VOLTS
150 WATTS
CASE 340D–02
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 4
©MMoototorroollaa, IBncip. 1o9la96r Power Transistor Device Data
1

1 page




MJH16006 pdf
MJH16006A
Table 1. Inductive Load Switching
+15
1 µF
Drive Circuit
150 100
100 µF
MTP8P10
+10
50
MPF930
MPF930
MUR105
500 µF
150
MJE210
1 µF
MTP8P10
RB1
A
RB2
MTP12N10
VCEO(sus)
L = 10 mH
RB2 =
VCC = 20 Volts
Inductive Switching
L = 750 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
RBSOA
L = 750 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
IC
VCE(pk)
VCE
IB
*IC
Voff
*Tektronix AM503
Scope — Tektronix
*P6302 or Equivalent 7403 or Equivalent
[ Lcoil (ICpk)
T1 VCC
T1 adjusted to obtain IC(pk)
Note: Adjust Voff to obtain desired VBE(off) at Point A.
T1
0V
A
+V
–V
T.U.T.
*IB
IC(pk)
IB1
IB2
L
MR918
Vclamp
VCC
IC(pk)
VCE(pk)
90% VCE(pk) 90% IC(pk)
IC tsv trv tfi tti
tc
VCE
IB 90% IB1
10% VCE(pk) 10%
IC(pk) 2% IC
8
6
IB1 = 1 A
4
0.5 A
2
IC = 5 A
TJ = 25°C
t, TIME
Figure 12. Inductive Switching Measurements
0
0 24
6
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
8
Figure 13. Peak Reverse Base Current
H.P. 214
OR
EQUIV.
P.G.
td and tr
*IC
*IB
RB = 8.5
50
T.U.T.
RL
VCC
Vin
0V
11 V
tr 15 ns
*Tektronix AM503
*P6302 or Equivalent
VCC
RL
IC
IB
250 V
50
5A
0.66 A
Table 2. Resistive Load Switching
+15
ts and tf 1 µF
150 100
100 µF
MTP8P10
MTP8P10
V(off) adjusted
to give specified
off drive
+10 V
50
MPF930
MPF930
MUR105
500 µF
150
MJE210
1 µF
Voff
A T.U.T.
*IB
RL 50
RB1
A
RB2
MTP12N10
*IC RL
VCC
Motorola Bipolar Power Transistor Device Data
5

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