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PDF MJF31C Data sheet ( Hoja de datos )
| Número de pieza | MJF31C | |
| Descripción | 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS | |
| Fabricantes | ON | |
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MJF31C* (NPN),
MJF32C* (PNP)
*Preferred Devices
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
Designed for use in general purpose amplifier and switching
applications.
• Collector–Emitter Saturation Voltage –
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector–Emitter Sustaining Voltage –
VCEO(sus) = 100 Vdc (Min)
• High Current Gain – Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• UL Recognized, File #E69369, to 3500 VRMS Isolation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol
MJF31C
MJF32C
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
VCEO 100 Vdc
VCB
100 Vdc
VEB
5.0 Vdc
IC Adc
3.0
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB 1.0 Adc
PD
28 Watts
0.22 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
@ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
PD
2.0 Watts
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLoad Energy (Note 1)
E 32 mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
TJ, Tstg
–65 to
+150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
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3.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 VOLTS
28 WATTS
4
1
23
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
MJF3xC
YWW
TO–220 FULLPAK
CASE 221D–02
MJF3xC = Specific Device Code
x = 1 or 2
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
APRIL, 2002 – Rev. 2
1
Publication Order Number:
MJF31C/D
1 page  
MJF31C* (NPN), MJF32C* (PNP)
500
300 TJ = 150°C
100 25°C
70 -ā55°C
50
30
VCE = 2.0 V
2.0
1.6
1.2 IC = 0.3 A
0.8
1.0 A
TJ = 25°C
3.0 A
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
0.4
0
3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 2.0 V
0.4
0.2 VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
+ā2.5
+ā2.0 *APPLIES FOR IC/IB ≤ hFE/2
+ā1.5 TJ = -ā65°C TO +ā150°C
+ā1.0
+ā0.5 *θVC FOR VCE(sat)
0
-ā0.5
-ā1.0
-ā1.5 θVB FOR VBE
-ā2.0
-ā2.5
0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
103
102 VCE = 30 V
101 TJ = 150°C
100 100°C
10-1 REVERSE
FORWARD
10-2 25°C
10-3
-ā0.4 -ā0.3 -ā0.2 -ā0.1
ICES
0 +ā0.1 +ā0.2 +ā0.3 +ā0.4 +ā0.5 +ā0.6
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
107
106
105 IC ≈ ICES
IC = 10 x ICES
VCE = 30 V
104 IC = 2 x ICES
103
102
20
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
160
Figure 13. Effects of Base–Emitter Resistance
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