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MJE13003 Schematic ( PDF Datasheet ) - ON

Teilenummer MJE13003
Beschreibung 1.5A, 400V, NPN SILICON POWER TRANSISTOR
Hersteller ON
Logo ON Logo 




Gesamt 8 Seiten
MJE13003 Datasheet, Funktion
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MJE13003
SWITCHMODEt Series NPN
Silicon Power Transistor
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
Reverse Biased SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C
tc @ 1 A, 100_C is 290 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
− Continuous
− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current
− Continuous
− Peak (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
Value
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
–65 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
mW/_C
W
mW/_C
_C
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Load Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8from Case for 5 Seconds
RqJC
RqJA
TL
3.12 _C/W
89 _C/W
275 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1
http://onsemi.com
1.5 AMPERES
NPN SILICON POWER
TRANSISTORS
300 AND 400 VOLTS
40 WATTS
321
TO−225
CASE 77
STYLE 3
MARKING DIAGRAM
1 BASE
2 COLLECTOR
3 EMITTER
YWW
JE
13003G
Y
WW
JE13003
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13003
MJE13003G
TO−225
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
Publication Order Number:
MJE13003/D






MJE13003 Datasheet, Funktion
MJE13003
RESISTIVE SWITCHING PERFORMANCE
2
1
0.7
0.5 tr
VCC = 125 V
IC/IB = 5
TJ = 25°C
0.3
0.2
td @ VBE(off) = 5 V
0.1
0.07
0.05
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 10
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn−On Time
20
10
7
5
ts
VCC = 125 V
IC/IB = 5
3 TJ = 25°C
2
1
0.7
0.5
0.3 tf
0.2
0.1
0.02 0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turn−Off Time
2
1
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05
0.1
ZqJC(t) = r(t) RqJC
RqJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5
1 2 3 5 10 20
t, TIME OR PULSE WIDTH (ms)
Figure 10. Thermal Response
50 100 200
500 1000
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