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MJE13002 Schematic ( PDF Datasheet ) - ON

Teilenummer MJE13002
Beschreibung NPN SILICON POWER TRANSISTORS
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MJE13002 Datasheet, Funktion
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13002/D
MJE13002*
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
MJE13003*
*Motorola Preferred Device
1.5 AMPERE
NPN SILICON
POWER TRANSISTORS
These devices are designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
300 AND 400 VOLTS
40 WATTS
220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
Reverse Biased SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C
. . . tc @ 1 A, 100_C is 290 ns (Typ).
700 V Blocking Capability
SOA and Switching Applications Information.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Load Temperature for Soldering Purposes:
1/8from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
Symbol
RθJC
RθJA
TL
CASE 77–08
TO–225AA TYPE
MJE13002
MJE13003
300 400
600 700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
mW/_C
Watts
mW/_C
_C
Max Unit
3.12 _C/W
89 _C/W
275 _C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 4
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1






MJE13002 Datasheet, Funktion
MJE13002 MJE13003
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5
TC = 25°C
100 µs 10 µs
5.0 ms
dc 1.0 ms
THERMAL LIMIT (SINGLE PULSE)
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
MJE13002
MJE13003
10 20
50 100 200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
Figure 11. Active Region Safe Operating Area
1.6
1.2
0.8
TJ 100°C
IB1 = 1 A
VBE(off) = 9 V
MJE13002 MJE13003
0.4
5V
3V
0 1.5 V
0 100 200 300 400 500 600
700 800
VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)
Figure 12. Reverse Bias Safe Operating Area
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 12 gives RBSOA characteristics.
1
SECOND BREAKDOWN
0.8 DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
20 40 60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 13. Forward Bias Power Derating
6 Motorola Bipolar Power Transistor Device Data

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