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PDF MJD41C Data sheet ( Hoja de datos )
| Número de pieza | MJD41C | |
| Descripción | Complementary Power Transistors | |
| Fabricantes | ON | |
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MJD41C (NPN),
MJD42C (PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Electrically Similar to Popular TIP41 and TIP42 Series
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
VCEO
VCB
VEB
IC
ICM
IB
PD
100
100
5
6
10
2
20
0.16
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD W
1.75
0.014
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
www.onsemi.com
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS, 20 WATTS
COMPLEMENTARY
COLLECTOR
2, 4
COLLECTOR
2, 4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
4
12
3
DPAK
CASE 369C
STYLE 1
12
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J4xCG
AYWW
J4xCG
DPAK
IPAK
A = Assembly Location
Y = Year
WW = Work Week
J4xC = Device Code
x = 1 or 2
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 13
1
Publication Order Number:
MJD41C/D
1 page  
MJD41C (NPN), MJD42C (PNP)
10
500 ms
100 ms
5
3
2
dc
1 ms
5 ms
1
0.5 WIRE BOND LIMIT
0.3 THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1 CURVES APPLY BELOW RATED VCEO
0.05
0.03
TC = 25°C SINGLE PULSE
TJ = 150°C
MJD41C, 42C
0.01
1
2 3 5 7 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Maximum Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) v 150_C. TJ(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
ORDERING INFORMATION
Device
Package Type
Package
Shipping†
MJD41CRLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD41CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD41CT4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD42CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD42C1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MJD42CRLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
NJVMJD42CRLG*
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD42CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD42CT4G*
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
www.onsemi.com
5
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