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PDF MJD3055 Data sheet ( Hoja de datos )
| Número de pieza | MJD3055 | |
| Descripción | SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJD3055 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to MJE2955 and MJE3055
• DC Current Gain Specified to 10 Amperes
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ High Current Gain–Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation (1) @ TA = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient (1)
Symbol
VCEO
VCB
VEB
IC
IB
PD†
PD
TJ, Tstg
Value
60
70
5
10
6
20
0.16
1.75
0.014
– 55 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Symbol
RθJC
RθJA
Max Unit
6.25 _C/W
71.4 _C/W
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
Order this document
by MJD2955/D
MJDNP2N955
MJDPN3P055
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS
20 WATTS
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
inches
mm
1
1 page  
PACKAGE DIMENSIONS
MJD2955 MJD3055
B
VR
–T–
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G 0.180 BSC
4.58 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC
2.29 BSC
R 0.175 0.215 4.45 5.46
S 0.020 0.050 0.51 1.27
U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
Z 0.138 ––– 3.51 –––
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
B
VR
–T–
SEATING
PLANE
S
4
123
A
K
C
E
F
G
J
D 3 PL
0.13 (0.005) M T
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.250
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.033 0.040
F 0.037 0.047
G 0.090 BSC
H 0.034 0.040
J 0.018 0.023
K 0.350 0.380
R 0.175 0.215
S 0.050 0.090
V 0.030 0.050
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.84 1.01
0.94 1.19
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.46
1.27 2.28
0.77 1.27
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJD3055.PDF ] | |
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