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PDF MJD117 Data sheet ( Hoja de datos )

Número de pieza MJD117
Descripción Complementary power Darlington transistors
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! MJD117 Hoja de datos, Descripción, Manual

MJD112
MJD117
Complementary power Darlington transistors
Features
■ Good hFE linearity
■ High fT frequency
■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration.
.
TAB
3
1
TO-252
(DPAK)
Figure 1. Internal schematic diagram
R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1. Device summary
Order codes
Marking
MJD112T4
MJD112
MJD117T4
MJD117
January 2010
Polarity
NPN
PNP
Doc ID 3540 Rev 3
Package
DPAK
DPAK
Packaging
Tape and reel
Tape and reel
1/10
www.st.com
10

1 page




MJD117 pdf
MJD112, MJD117
Figure 8. Base-emitter saturation
voltage (NPN)
Electrical characteristics
Figure 9. Base-emitter saturation
voltage (PNP)
Figure 10. Base-emitter on voltage
(NPN)
Figure 11. Base-emitter on voltage
(PNP)
Figure 12. Resistive load switching time Figure 13. Resistive load switching time
(NPN, on)
(PNP, on)
Doc ID 3540 Rev 3
5/10

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