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PDF MJ413 Data sheet ( Hoja de datos )
| Número de pieza | MJ413 | |
| Descripción | 10 Amp NPN Silicon Power Transistors 125W | |
| Fabricantes | Micro Commercial Components | |
| Logotipo |  |
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MCC
omponents
21201 Itasca Street Chatsworth
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MJ413
MJ423
MJ431
)HDWXUHV
• High Collector-Emitter Voltage VCES=400V
• DC Current Gain Specified 3.5A
• High Frequency Response to 2.5 MHz
0D[LPXP5DWLQJV
• Operating Temperature: -55°C to +150°C
:• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance: 1.0 /W junction to case
Characteristic
Symbol
Collector-Emitter Voltage
VCEX
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Collector Current-Continuous
IC
Base Current
:Total Device Dissipation @TC=25
:Derate above 25
IB
PD
Max
400
400
5.0
10
2.0
125
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
:Watts
W/
Figure 1 - Power Derating Curve
0 50 100 150
Temperature °C
Power Dissipation (W) - Versus - Temperature °C
10 Amp
NPN Silicon
Power Transistors
125W
TO-3
A
N
E
C
K
D
V
H
U
L
2
1
GB
Q
PIN 1.
PIN 2.
CASE.
BASE
EMITTER
COLLECTOR
DIMENSIONS
INCHES
MM
DIM MIN
MAX
MIN
MAX
A 1.550 REF
39.37 REF
B ----- 1.050 -----
26.67
C .250
.335
6.35
8.51
D .038
.043
0.97
1.09
E 0.55
0.70
1.40
1.77
G .430 BSC
10.92 BSC
H .215 BSC
5.46 BSC
K .440
.480 11.18
12.19
L .665 BSC
16.89 BSC
N -----
.830
-----
21.08
Q .151
.165
3.84
4.19
U 1.187 BSC
30.15 BSC
V .131
.188
3.33
4.77
NOTE
∅
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJ413.PDF ] | |
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