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PDF 7MBP150RA-060 Data sheet ( Hoja de datos )
| Número de pieza | 7MBP150RA-060 | |
| Descripción | Intelligent Power Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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7MBP 150RA-060
IGBT IPM
600V
6×150A+DB
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
n Outline Drawing
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min. Max.
DC Bus Voltage
VDC
DC Bus Voltage (surge)
VDC(Surge)
DC Bus Voltage (short operating)
VSC
Collector-Emitter Voltage
VCES
Inverter
Continuous
IC
Collector
1ms
ICP
Current
Duty=58.8%
-IC
Collector Power Dissipation One Transistor PC
Dynamic Brake
Continuous
IC
Collector Current
1ms
ICP
Forward Current of Diode
IF
Collector Power Dissi. DB One Transistor PC
Voltage of Power Supply for Driver
VCC *1
Input Signal Voltage
VIN *2
Input Signal Current
IIN
Alarm Signal Voltage
VALM *3
Alarm Signal Current
IALM *4
Junction Temperature
Tj
Operating Temperature
TOP
Storage Temperature
Tstg
Isolation Voltage
A.C. 1min.
Viso
Screw Torque
Mounting *1
Terminals *1
0
0
200
0
0
0
0
-20
-40
450
500
400
600
150
300
150
595
50
100
50
198
20
VZ
1
VCC
15
150
100
125
2500
3.5
3.5
V
A
W
A
W
V
mA
V
mA
°C
V
Nm
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
Fig. 1
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
Items
Collector Current At Off Signal Input
Symbols
ICES
Conditions
VCE=600V, Input Terminal Open
INV Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Collector Current At Off Signal Input
VCE(Sat)
VF
ICES
IC=150A
-IC=150A
VCE=600V, Input Terminal Open
DB Collector-Emitter Saturation Voltage
Forward Voltage of FWD
VCE(Sat)
VF
IC=50A
-IC=50A
Min.
Typ.
Max.
1.0
2.8
3.0
1.0
2.8
3.3
Units
mA
V
V
mA
V
V
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Input Signal Threshold Voltage
ICCP
ICCN
VIN(th)
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
DB Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
tALM
RALM
RIN=20kΩ
VDC=0V, IC=0A, Case Temp.
Surface of IGBT Chip
Tj=125°C
Tj=125°C
Tj=25°C
Under Voltage Protection Level
Hysteresis
VUV
VH
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
Switching Time
tON
tOFF
tRR
Conditions
IC=150A, VDC=300V
IF=150A, VDC=300V
Min.
3
10
1.00
1.25
110
150
225
75
1.5
1425
11.0
0.2
Min.
0.3
Typ.
1.35
1.60
8.0
20
20
10
2
1500
Typ.
Max.
18
65
1.70
1.95
Units
mA
V
125
°C
1575
12.5
A
µs
ms
Ω
V
Max.
3.6
0.4
Units
µs
1 page  
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7MBP 150RA-060
IGBT IPM
600V
6×150A+DB
n Inverter
Collector Current vs. Collector-Emitter Voltage
Tj=25°C
300
250
VCC=17V,15V, 13V
200
150
100
50
0
01234
Collector-Emitter Voltage : VCE [V]
Collector Current vs. Collector-Emitter Voltage
3 0 0 Tj=125°C
250
VCC=17V,15V, 13V
200
150
100
50
0
01234
Collector-Emitter Voltage : VCE [V]
1000
Switching Time vs. Collector Current
V DC=300V, VCC=15V, T j= 2 5 ° C
ton
toff
100
0
tf
50 100 150
Collector Current : IC [A]
200
250
1000
Switching Time vs. Collector Current
V DC= 3 0 0 V , V CC=15V, Tj= 1 2 5 ° C
toff
ton
tf
100
0
50 100 150 200
Collector Current : IC [A]
250
300
250
200
150
100
50
0
0
Forward Voltage vs. Forward Current
Tj=125°C 2 5 ° C
123
Forward Voltage : VF [V]
4
100
Reverse Recovery Characteristics
t , I vs. I
rr rr
F
trr= 1 2 5 ° C
trr= 2 5 ° C
Irr= 1 2 5 ° C
Irr= 1 2 5 ° C
10
0
50 100 150 200
Forward Current : IF [A]
250
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 7MBP150RA-060.PDF ] | |
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