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PDF MCR102 Data sheet ( Hoja de datos )
| Número de pieza | MCR102 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MCR102 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Annular PNPN devices designed for low cost, high volume consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,
and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA
package which is readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current — 200 µA Maximum
• Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 85°C
• Low Holding Current — 5 mA Maximum
• Passivated Surface for Reliability and Uniformity
Order this document
by MCR102/D
MCR102
MCR103
SCRs
0.8 AMPERES RMS
30 and 60 VOLTS
G
AK
KG
A CASE 29-04
(TO-226AA)
STYLE 10
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(2)
(TC = + 85°C, RGK = 1 kΩ)
MCR102
MCR103
Symbol
VDRM
VRRM
Value
30
60
Unit
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
IT(RMS)
0.8
Amps
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
ITSM 10 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
0.415
A2s
Peak Gate Power — Forward, TA = 25°C
Average Gate Power — Forward, TA = 25°C
Peak Gate Current — Forward, TA = 25°C
(300 µs, 120 PPS)
PGM
PGF(AV)
IGFM
0.1
0.01
1
Watt
Watt
Amp
Peak Gate Voltage — Reverse
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
tLead Solder Temperature
( 1/16I from case, 10 s max)
VGRM
TJ
Tstg
—
4
–40 to +85
–40 to +150
+ 230
Volts
°C
°C
°C
1. Temperature reference point for all case temperature is center of flat portion of package. (TC = +85°C unless otherwise noted.)
2. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
voltage but positive gate voltage shall not be applied concurrently with a negative potential on the anode. When checking forward or reverse
blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the
rated blocking voltage.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MCR102.PDF ] | |
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