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PDF MG200J2YS50 Data sheet ( Hoja de datos )

Número de pieza MG200J2YS50
Descripción Silicon N Channel IGBT GTR Module
Fabricantes Toshiba 
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TOSHIBA GTR Module Silicon N Channel IGBT
MG200J2YS50
MG200J2YS50
High Power Switching Applications
Motor Control Applications
Unit: mm
l The electrodes are isolated from case.
l High input impedance
l Includes a complete half bridge in one package.
l Enhancement-mode
l High Speed : tf = 0.30µs (Max) (IC = 200A)
trr = 0.15µs (Max) (IF = 200A)
l Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 200A)
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
2-95A1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
Rating
600
±20
200
400
200
400
900
150
40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
A
A
W
°C
°C
V
N·m
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
2001-02-22 1/5

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2001-02-22 5/5

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