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Teilenummer | MG1200V1US51 |
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Beschreibung | TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT | |
Hersteller | Toshiba | |
Logo | ||
Gesamt 4 Seiten MG1200V1US51
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
MG1200V1US51
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
FEATURES
l High Input Impedance
l Enhancement Mode
l Electrodes are isolated from case.
EQUIVALENT CIRCUIT
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTICS
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Isolation Voltage
Screw Torque
Terminal: M4/M8
Mounting
SYMBOL
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
RATING
1700
20
1200
2400
1200
2400
5560
−20~125
−40~125
5400
(AC 1min)
2/7
4
UNIT
V
V
A
A
W
°C
°C
V
N·m
1
2001-06-26
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ MG1200V1US51 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MG1200V1US51 | TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT | Toshiba |
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