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MG1200V1US51 Schematic ( PDF Datasheet ) - Toshiba

Teilenummer MG1200V1US51
Beschreibung TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Hersteller Toshiba
Logo Toshiba Logo 




Gesamt 4 Seiten
MG1200V1US51 Datasheet, Funktion
MG1200V1US51
TOSHIBA GTR MODULE SILICON NCHANNEL IGBT
MG1200V1US51
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
FEATURES
l High Input Impedance
l Enhancement Mode
l Electrodes are isolated from case.
EQUIVALENT CIRCUIT
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTICS
CollectorEmitter Voltage
GateEmitter Voltage
Collector Current
DC
1ms
Forward Current
DC
1ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
Isolation Voltage
Screw Torque
Terminal: M4/M8
Mounting
SYMBOL
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
RATING
1700
20
1200
2400
1200
2400
5560
20~125
40~125
5400
(AC 1min)
2/7
4
UNIT
V
V
A
A
W
°C
°C
V
N·m
1
2001-06-26





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